BSO613SPVGXUMA1 vs BSO150N03MDGXUMA1 Comparison
Detailed side-by-side comparison of BSO613SPVGXUMA1 by Infineon and BSO150N03MDGXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSO613SPVGXUMA1 - P-Ch 60V 3.44A MOSFET | Infineon | Load Switch
BSO613SPVGXUMA1 β ActiveInfineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 β ActiveSpecification Comparison
| Parameter | BSO613SPVGXUMA1 | BSO150N03MDGXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.37 |
| FET Type | P-Channel | β |
| Drain-Source Voltage (VDS) | -60 V | β |
| Continuous Drain Current (ID) at TA=25C | -3.44 A | β |
| Power Dissipation (PD) at TA=25C | 2.5 W | β |
| Package | PG-DSO-8-6 (Power-SO-8) | PG-DSO-8 (SO-8 with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS (Trench) | OptiMOS 3M (30V trench MOSFET) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | β |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max at VGS=10V] | β |
| RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) max at VGS=4.5V] | β |
| Operating Temperature Range | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) | -55C to +150C |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-V] | 20 V |
| MSL Level | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) | 1 (unlimited) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Avalanche Rated | Yes (per Infineon OptiMOS family) | β |
| Pin Count | 8 (6 active, 2 thermal/NC) | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSO150N03MDGXUMA1 |
| Product Type | β | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) max per channel | β | 9.3 A |
| On-State Resistance (RDS(on)) max | β | 15 mOhm at VGS=10V |
| Gate Threshold Voltage (VGS(th)) typ | β | 1.0 V |
| Power Dissipation (PD) max | β | 1.4 W |
| Channel Configuration | β | Dual N-Channel (independent) |