BSP295H6327XTSA1 vs BSL606SNH6327XTSA1 Comparison

Detailed side-by-side comparison of BSP295H6327XTSA1 by Infineon and BSL606SNH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSP295H6327XTSA1

BSP295H6327XTSA1 - 60V 1.8A N-Ch MOSFET SOT-223 | Infineon

BSP295H6327XTSA1 βœ“ Active
Infineon
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon

BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon

BSL606SNH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSP295H6327XTSA1 BSL606SNH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.35 $0.19
Transistor Type N-Channel MOSFET N-Channel MOSFET (Enhancement Mode)
Drain-Source Voltage (VDS) max 60 V β€”
Continuous Drain Current (ID) at Ta=25 Β°C 1.8 A β€”
Power Dissipation (PD) at Ta=25 Β°C 1.8 W β€”
Drain-Source On-Resistance RDS(on) max 300 mΞ© β€”
Package PG-SOT223-4 (3 leads + tab) PG-TSOP6-6 (6-pin, SOT-23-6 compatible)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +150 Β°C -55C to +150C (Tj)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical/min]
Qualification AEC-Q101 (Automotive) AEC-Q101 (Automotive)
RoHS Status Compliant Compliant (Pb-free plating)
Tape and Reel Packing Code H6327 (7-inch reel) β€”
Channel Mode Enhancement β€”
Technology Planar N-channel MOSFET OptiMOS3 trench MOSFET
Drain Tab Connection Pin 4 (tab) β€”
Drain-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at Ta β€” 4.5 A
Static Drain-Source On-Resistance (RDS(on)) β€” 60 mOhm (max, VGS = 10 V)
Total Power Dissipation (PD) at Ta β€” 2 W
Gate-Source Voltage (VGS) β€” +/-20 V (max)
Total Gate Charge (Qg) β€” 5.6 nC (max)
MSL Level β€” 1 (per JEDEC J-STD-020)

Datasheets & Resources

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