BSS119NH6327XTSA1 vs BSS214NH6327XTSA1 Comparison
Detailed side-by-side comparison of BSS119NH6327XTSA1 by Infineon and BSS214NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSS119NH6327XTSA1 - 100V N-Ch MOSFET, 190mA, SOT-23 | Infineon
BSS119NH6327XTSA1 β ActiveSpecification Comparison
| Parameter | BSS119NH6327XTSA1 | BSS214NH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.12 | $0.09 |
| Transistor Type | N-Channel MOSFET | β |
| FET Technology | Enhancement-mode, planar N-channel | β |
| Drain-Source Voltage (VDS) max | 100 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 190 mA | β |
| Power Dissipation (PD) at TA=25Β°C | 500 mW | β |
| Drain-Source On-Resistance (RDS(on)) max | 6 Ξ© (typical) [DATA_NEEDED: exact VGS condition and max value] | β |
| Gate Threshold Voltage (VGS(th)) | 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] | β |
| Gate Drive Voltage (VGS) | Β±20 V max | β |
| Package | PG-SOT23 (SOT-23-3) | SOT-23 (PG-SOT23), 3 pins |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ) [DATA_NEEDED: TA range from datasheet] | -55C to +150C (junction) |
| Qualification | AEC-Q101 (automotive grade) | AEC-Q101 (Automotive) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Packaging | Tape & Reel (3,000 pcs/reel) | β |
| MSL Level | 1 [DATA_NEEDED: confirm from datasheet] | 1 (per JEDEC J-STD-020) |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 20 V |
| Continuous Drain Current (ID) | β | 1.5 A (Ta) |
| Power Dissipation (PD) | β | 500 mW (Ta) |
| Drain-Source On-Resistance (RDS(on) max) | β | 250 mOhm at VGS = 4.5 V |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-Source Voltage (VGS max) | β | Β±12 V (recommended) |
| Technology | β | OptiMOS 2 (planar N-channel) |
| Lead Finish | β | Pb-free lead plating (matte tin) |
| ESD Protection | β | Yes (gate ESD diode) |