BSS119NH6327XTSA1 - 100V N-Ch MOSFET, 190mA, SOT-23 | Infineon
MPN: BSS119NH6327XTSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.3 | $0.30 |
| 10 | $0.28 | $2.80 |
| 100 | $0.22 | $22.00 |
| 500 | $0.18 | $90.00 |
| 1,000 | $0.15 | $150.00 |
| 3,000 | $0.12 | $360.00 |
BSS119NH6327XTSA1 Overview
What is an N-channel small-signal MOSFET? A small-signal MOSFET is a discrete field-effect transistor designed for low-current switching and analog signal routing rather than high-power conversion. It belongs to the broader metal-oxide-semiconductor FET (MOSFET) family and the discrete-semiconductor hierarchy, sitting between signal-level amplifier transistors and power MOSFETs. Small-signal N-channel MOSFETs such as the BSS119N are widely used for high-side or low-side switching in 12 V and 24 V automotive and industrial rails where a logic-level gate can fully enhance the channel.
Key features of the BSS119N include a maximum drain-source on-resistance of 6 Ω typical at VGS=10 V, a gate threshold voltage typically in the 0.8 V to 1.8 V range, and low gate charge that enables fast switching at audio and baseband frequencies. The SOT-23-3 footprint is industry-standard, which allows PCB reuse across many Infineon, onsemi, and Diodes Incorporated N-channel parts. The part is supplied on tape-and-reel for high-volume automated assembly and is RoHS-compliant.
Technically, the device uses Infineon's mature planar N-channel technology and a logic-level-compatible threshold so that 5 V microcontrollers can drive the gate directly without a charge pump. The 100 V VDS rating provides substantial headroom over 12 V automotive and 24 V industrial rails, suppressing transient ringing and inductive kickback. The 190 mA continuous drain rating is sufficient for relay coils, small solenoids, signal-line multiplexing, and LED strings.
Typical applications include automotive load switching (lamp drivers, relay drivers, small motor control), industrial 24 V sensor multiplexing, battery-protection discharge FETs in low-current packs, level shifters between 3.3 V logic and 12 V buses, and signal-line multiplexing in test equipment. Designers value the part for its automotive-grade reliability and small PCB footprint.
When designing with the BSS119N, ensure that the gate is pulled low during power-up with a 100 kΩ resistor to prevent accidental turn-on from floating-gate leakage currents on noisy rails. Limit switching frequency to a few hundred kHz if the part is used in PWM applications to keep switching losses and EMI low.
This page synthesizes distributor pricing, automotive-grade context, drop-in alternatives in the SOT-23-3 footprint, and practical PCB design notes that are not consolidated in the manufacturer datasheet.
Drop-in alternatives for BSS119NH6327XTSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSS119NH6327XTSA1 (same form factor and footprint) — differing in Operating Temperature Range, Package, Qualification, Continuous Drain Current (ID), Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSS123NH6327XTSA1
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$0.085 / Unit
View Datasheet →2N7002H6327XTSA2
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$0.08 / Unit
View Datasheet →BSS138NH6327XTSA2
✅ Drop-In✓ In Stock
$0.15 / Unit
View Datasheet →BSS214NH6327XTSA1
✅ Drop-In✓ In Stock
$0.09 / Unit
View Datasheet →BSS308PEH6327XTSA1
✅ Drop-In✓ In Stock
$0.11 / Unit
View Datasheet →BSS119NH6327XTSA1 Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| FET Technology | Enhancement-mode, planar N-channel |
| Drain-Source Voltage (VDS) max | 100 V |
| Continuous Drain Current (ID) at TA=25°C | 190 mA |
| Power Dissipation (PD) at TA=25°C | 500 mW |
| Gate Drive Voltage (VGS) | ±20 V max |
| Package | PG-SOT23 (SOT-23-3) |
| Mounting Type | Surface Mount |
| Qualification | AEC-Q101 (automotive grade) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Packaging | Tape & Reel (3,000 pcs/reel) |
BSS119NH6327XTSA1 Pin Configuration
| Pin 1 | Gate — Gate drive input; logic-level threshold (~0.8-1.8 V) |
| Pin 2 | Source — Source terminal; typically tied to load return or ground for low-side switching |
| Pin 3 | Drain — Drain terminal; connects to load (low-side switch) or supply (high-side switch) |
Safe Operating Area (DC)
Typical Applications
BSS119NH6327XTSA1 is suitable for 6 applications: Automotive Relay and Lamp Driver, Industrial 24 V Sensor Multiplexing, Battery-Protection Discharge FET, Logic-Level to 12 V Level Shifter, Signal-Line Multiplexing and Switching, LED Driver for Small Indicator Strings.
Automotive Relay and Lamp Driver
The Infineon BSS119NH6327XTSA1 is well suited to automotive relay and lamp-driver circuits, where its 100 V VDS rating comfortably covers the 13.5 V to 16 V automotive supply and inductive flyback transients from relay coils. The 190 mA continuous drain current handles small relay coils, LED strings, and indicator lamps typical of body and chassis ECUs. Its AEC-Q101 qualification ensures long-term reliability under thermal cycling, humidity, and vibration stress. Designers place the BSS119N as a low-side switch with a flyback diode across the inductive load, and use a 100 kΩ gate pull-down to prevent false turn-on during MCU reset. The 500 mW power dissipation at TA=25°C gives ample thermal margin for the low duty cycles typical of relay-driver duty.
Recommended
Industrial 24 V Sensor Multiplexing
In industrial 24 V sensor-multiplexing applications, the BSS119NH6327XTSA1 acts as a low-side analog switch that routes multiple sensor signals to a single ADC input. Its 100 V VDS rating easily tolerates the 24 V nominal rail plus ±40 V transient surges common on factory floors, while the 190 mA drain current is more than enough for sensor bias currents below 50 mA. The small SOT-23-3 footprint allows high channel density on multiplexer boards. A gate pull-down resistor of 100 kΩ ensures the channel stays off when the controller GPIO is high-impedance during boot. Designers typically use a TVS diode at the multiplexer input to clamp ESD and surge transients, while the BSS119N provides the low-leakage, low-RDS(on) switching path needed for accurate analog multiplexing.
Recommended
Battery-Protection Discharge FET
In low-current lithium-ion battery packs (single-cell power banks, IoT backup batteries, small e-bike packs), the BSS119NH6327XTSA1 serves as a compact discharge-side protection FET. Its 100 V VDS rating easily handles the 4.2 V maximum cell voltage plus any series-cell configuration, while the 190 mA continuous drain rating is well matched to low-current loads. The SOT-23-3 footprint saves board space compared to the DPAK FETs used in higher-current packs. The BSS119N is wired in series with the pack negative terminal and driven by the battery management IC's discharge-FET gate drive. A typical protection loop relies on the BSS119N's low RDS(on) at full VGS to minimize voltage drop and runtime loss during normal discharge, while its logic-level threshold ensures the BMS can fully enhance the channel.
Recommended
Logic-Level to 12 V Level Shifter
The BSS119NH6327XTSA1 is widely used as a low-side level shifter that bridges 3.3 V microcontroller GPIOs and 12 V buses. Its gate threshold of 0.8 V to 1.8 V (typical) is well below 3.3 V, so a logic-high GPIO can fully enhance the channel with substantial margin. The 100 V VDS rating comfortably tolerates the 12 V bus plus transient spikes common in industrial and automotive environments. In a typical application, the BSS119N is placed between the load and ground, with its gate driven by the MCU through a small series resistor. A 100 kΩ gate pull-down prevents floating-gate turn-on during MCU reset. The 190 mA drain current is sufficient for indicator LEDs, optocouplers, small relays, and gate-drive bootstrap circuits.
Recommended
Signal-Line Multiplexing and Switching
In test equipment and instrumentation, the BSS119NH6327XTSA1 functions as a low-leakage signal-line multiplexer or analog switch for sub-200 mA loads. Its low RDS(on) and small SOT-23-3 footprint enable high channel density on multiplexer PCBs. Designers place the BSS119N as a low-side switch in series with each signal path, with the gates driven by logic-level control lines. The 100 V VDS rating ensures the switch survives ESD and over-voltage events on the signal lines, while the logic-level threshold allows direct GPIO control without level-shifting. This configuration is widely used in automated test equipment (ATE), data-acquisition front-ends, and reconfigurable instrumentation where signal routing must be solid-state rather than electromechanical.
Recommended
LED Driver for Small Indicator Strings
The BSS119NH6327XTSA1 is well suited to driving small LED strings in automotive interior lighting, status indicators, and decorative strips. Its 190 mA continuous drain current comfortably drives 5-10 standard indicator LEDs in series, while its 100 V VDS rating supports long LED strings and tolerates load-dump transients in 12 V automotive rails. The SOT-23-3 footprint allows high-density placement on LED-driver boards, and its AEC-Q101 qualification ensures automotive-grade reliability. In a typical application, the BSS119N is wired in low-side configuration with a current-sense resistor and PWM drive from a microcontroller or LED-driver IC. Its fast switching speed supports PWM dimming at up to several kHz without visible flicker.
Recommended
Recommended Products Summary
Engineering reference data for BSS119NH6327XTSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSS123NH6327XTSA1 | 2N7002H6327XTSA2 | BSS138NH6327XTSA2 | BSS214NH6327XTSA1 | BSS308PEH6327XTSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | SOT-23-3 (PG-SOT23) | SOT-23-3 (PG-SOT23) - same | SOT-23-3 (PG-SOT23) - same | SOT-23-3 (PG-SOT23) - same | SOT-23-3 (PG-SOT23) - same | SOT-23-3 (PG-SOT23) - same |
| Drain-Source Voltage (VDS) max | 100 V | 100 V | 60 V (-40%) | 50 V (-50%) | 20 V (-80%) | 30 V P-channel (-70%) |
| Continuous Drain Current (ID) at TA=25°C | 190 mA | 190 mA | 200 mA | 220 mA | 1.5 A | 2.0 A (P-channel) |
| Automotive Grade (AEC-Q101) | Yes | Yes | Commercial grade | Commercial grade | Yes | Yes |
| Channel Polarity | N-channel | N-channel | N-channel | N-channel | N-channel | P-channel |
Key Differentiators
- 100 V VDS rating in SOT-23-3 with automotive qualification (vs BSS138NH6327XTSA2)
- AEC-Q101 qualified for automotive reliability programs (vs 2N7002H6327XTSA2)
- Same-package compatibility with BSS123NH6327XTSA1 enables easy upgrade path (vs BSS123NH6327XTSA1)
Design Notes
Always include a 100 kΩ gate-to-source pull-down resistor on the BSS119NH6327XTSA1. Without it, the gate can float to an undefined voltage during MCU reset or brown-out, which on a high-impedance gate oxide can partially enhance the channel and cause unintended load activation. This is a particularly insidious failure mode in automotive designs where supply transients are common. Place the pull-down resistor physically close to the gate pin to minimize parasitic inductance.
Estimated: with the SOT-23-3 package mounted on a minimum JEDEC EIA/JESD51 1-square-inch 2-oz copper pad, the thermal resistance θJA is approximately 250°C/W. At continuous drain current of 190 mA and RDS(on) of 6 Ω, the worst-case steady-state dissipation is roughly 0.22 W, producing a junction-temperature rise of about 55°C above 25°C ambient (junction ~80°C). This is well below the 150°C maximum, but designers should derate for ambient temperatures above 70°C in under-hood automotive environments.
Place the gate-drive series resistor (typically 100 Ω) within 5 mm of the BSS119N's gate pin to dampen parasitic LC ringing from the gate-source capacitance and PCB trace inductance. Keep the drain-trace short and wide to minimize voltage overshoot when switching inductive loads. Connect the SOT-23-3 source pin (pin 2) directly to the ground plane with a via or short trace to ensure low-impedance gate-drive return. A small 10 nF ceramic bypass capacitor near the gate further reduces dv/dt-induced false turn-on in noisy environments.
When switching inductive loads such as relay coils or solenoids, add a freewheeling diode (1N4148 or Schottky) directly across the inductor with the cathode at the drain. Without this diode, the inductive kickback can drive VDS well above the 100 V absolute maximum, destroying the BSS119N. For high-side inductive switching, use a TVS diode (e.g., SMAJ24CA) from drain to source to clamp transients. Slow the gate rise/fall time with a 1 kΩ gate resistor if EMI is a concern, at the cost of slightly higher switching loss.
Compliance Information
RoHS compliant and lead-free per Infineon product page. AEC-Q101 qualified for automotive discrete semiconductors (note: AEC-Q100 is the IC standard; AEC-Q101 is the correct discrete standard, marked as not_applicable here). Halogen-free status not explicitly stated in the provided data; mark as unknown.
