BSS138NH6327XTSA2 vs BSS138L Comparison

Detailed side-by-side comparison of BSS138NH6327XTSA2 by Infineon and BSS138L by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS138NH6327XTSA2 BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

BSS138NH6327XTSA2 βœ“ Active

Specification Comparison

Parameter BSS138NH6327XTSA2 BSS138L
Brand Infineon onsemi
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.15 $0.02
Polarity N-Channel N-Channel
Operating Mode Enhancement Enhancement Mode
V(BR)DSS (Drain-Source Breakdown Voltage) 60 V β€”
R_DS(on) max @ V_GS=10V 3.5 ohm β€”
Continuous Drain Current (Ta) 230 mA 200 mA
Power Dissipation (Ta) 360 mW 350 mW
Gate Threshold V_GS(th) [DATA_NEEDED: typical V_GS(th) value] β€”
Package PG-SOT-23 (3-pin) SOT-23-3
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: Tj max and operating range] [DATA_NEEDED: operating temperature range]
Gate-Source Voltage V_GS max Β±20 V β€”
dv/dt Rated Yes β€”
Halogen-Free Yes (per IEC 61249-2-21) β€”
RoHS Compliance Compliant β€”
AEC-Q101 Qualification Qualified β€”
Lead Plating Pb-free β€”
Marking Code [DATA_NEEDED: top-side marking code] β€”
Packaging Tape and Reel 3000 units per reel (tape and reel)
VDS Drain-Source Voltage β€” 50 V
RDS(on) Max β€” 3.5 ohm
Technology β€” Trench MOSFET, high cell density
Gate Type β€” Logic Level
Configuration β€” Single FET
Switching Performance β€” Fast switching, rugged, reliable
Input Capacitance β€” [DATA_NEEDED: Ciss]
VGS Gate-Source Voltage β€” [DATA_NEEDED: VGS max rating]
RoHS Status β€” [DATA_NEEDED: RoHS status]

Datasheets & Resources

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