Infineon

BSS138NH6327XTSA2 - 60V N-Ch MOSFET 230mA SOT-23 | Infineon

MPN: BSS138NH6327XTSA2 βœ“ Active
In Stock Ships in 1-3 business days
60 V Vdss 230 mA Id PG-SOT-23 (3-pin) Package
From $0.15 USD / Unit
MOQ: 1 |
Price updated: 2026-09-10
Volume Pricing
Qty Unit Price Extended
1 $0.42 $0.42
10 $0.36 $3.60
100 $0.27 $27.00
500 $0.22 $110.00
1,000 $0.18 $180.00
3,000 $0.15 $450.00
ℹ️ All prices are in USD

BSS138NH6327XTSA2 Overview

The Infineon BSS138NH6327XTSA2 is an N-channel enhancement-mode SIPMOS small-signal MOSFET rated at 60 V V(BR)DSS, 230 mA continuous drain current (Ta), and 3.5 ohm maximum R_DS(on) at V_GS = 10 V, housed in a 3-pin PG-SOT-23 surface-mount package and supplied on tape-and-reel. Its logic-level V_GS(th) of approximately 1.4 V allows direct drive from 3.3 V or 5 V microcontrollers without a gate-driver stage, making it a standard building block for low-power switching. The device is qualified to AEC-Q101, halogen-free per IEC 61249-2-21, Pb-free with RoHS-compliant lead plating, and carries an automotive-grade reliability profile.

A small-signal N-channel MOSFET such as the BSS138N is a voltage-controlled majority-carrier device used to switch or amplify low-level signals; the enhancement-mode variant is normally off at zero gate bias and turns on when V_GS exceeds the threshold voltage. Within the broader taxonomy it belongs to the discrete MOSFET family, then to field-effect transistors, then to discrete semiconductors. SIPMOS denotes Infineon's proprietary SIP (system-in-package) lateral MOSFET process, optimized for low gate charge and fast switching at low currents.

Key features include 60 V drain-source breakdown, 3.5 ohm max R_DS(on), 230 mA continuous drain current at 25 C ambient, 360 mW power dissipation at Ta, logic-level gate drive, dv/dt ruggedness, and AEC-Q101 automotive qualification. The PG-SOT-23 footprint provides industry-standard land patterns accepted across consumer, industrial, and automotive boards, simplifying second-sourcing.

Technically the BSS138N uses a planar SIPMOS die with low Q_G and Q_GD, which keeps switching losses small and enables efficient PWM operation in the kHz range. Body-diode reverse recovery is intentionally soft for this class, suitable for low-current synchronous-rectifier or freewheel duty in sub-1 A converters. The gate oxide is rated for Β±20 V V_GS, providing margin against transient over-drive.

Typical applications include level shifters and signal translation between 3.3 V microcontrollers and 12 V loads, low-side switching for relays, solenoids, and LEDs, flyback or boost aux converters in sub-watt power supplies, and generic analog switches. It is also widely used as a digital signal multiplexer building block and load driver in IoT nodes.

When designing with this part, observe the 360 mW Ta dissipation budget - at 230 mA in SOT-23 the device derates quickly above 25 C, so compute junction temperature rise carefully. Place the gate pull-down resistor directly at the gate pin to prevent unintended turn-on from leakage on floating MCU outputs.

This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.

Drop-in alternatives for BSS138NH6327XTSA2 β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Variants in this series

Same-series models that are drop-in compatible with BSS138NH6327XTSA2 (same form factor and footprint) β€” differing in Package, Continuous Drain Current (ID), Technology, Drain-Source Voltage (VDS), Qualification.

Infineon
Package: PG-SOT23 (SOT-23-3)
Continuous Drain Current (ID): 300 mA (Ta)
Technology: OptiMOS (Planar)
Compare with BSS138NH6327XTSA2 β†’
onsemi
Package: SOT-23 (SOT-23-3)
Continuous Drain Current (ID): 115 mA (Ta)
Technology: High cell density trench MOSFET
Compare with BSS138NH6327XTSA2 β†’
Infineon
Package: PG-SOT23 (SOT-23-3)
Qualification: AEC-Q101 (automotive grade)
Compare with BSS138NH6327XTSA2 β†’
Infineon
Package: PG-SOT23 (SOT-23-3)
Continuous Drain Current (ID): 190 mA (Ta)
Drain-Source Voltage (VDS): 100 V
Compare with BSS138NH6327XTSA2 β†’
onsemi
Package: SOT-23-3
Technology: Trench MOSFET, high cell density
Compare with BSS138NH6327XTSA2 β†’
VBsemi Elec
Package: SOT-23-3 (TO-236)
Compare with BSS138NH6327XTSA2 β†’
Infineon
Package: SOT-23 (PG-SOT23), 3 pins
Continuous Drain Current (ID): 1.5 A (Ta)
Technology: OptiMOS 2 (planar N-channel)
Compare with BSS138NH6327XTSA2 β†’
Infineon
Package: SOT-23 (PG-SOT23), 3-pin
Continuous Drain Current (ID): 2.3 A (Ta)
Technology: MOSFET (Metal Oxide)
Compare with BSS138NH6327XTSA2 β†’
Infineon
Continuous Drain Current (ID): -2 A (Ta)
Drain-Source Voltage (VDS): -30 V
Qualification: AEC-Q101 Automotive
Compare with BSS138NH6327XTSA2 β†’
Infineon
Package: PG-SOT23 (SOT-23-3)
Technology: MOSFET (Metal-Oxide Semiconductor)
Drain-Source Voltage (VDS): -60 V
Compare with BSS138NH6327XTSA2 β†’
Infineon
Package: PG-SOT23 (SOT-23-3)
Continuous Drain Current (ID): -170 mA (Ta)
Qualification: AEC-Q101 (Automotive)
Compare with BSS138NH6327XTSA2 β†’
Infineon
Package: Micro3/SOT-23
Technology: IR MOSFET
Compare with BSS138NH6327XTSA2 β†’

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

2N7002H6327XTSA2

βœ… Drop-In
Infineon
πŸ“¦ PG-SOT-23
N-Channel MOSFET Β· OptiMOS (Planar) Β· 60 V Β· 300 mA (Ta) Β· 500 mW (Ta) Β· 3 ohm max @ VGS = 10 V

βœ“ In Stock

$0.08 / Unit

View Datasheet β†’

BSS214NH6327XTSA1

βœ… Drop-In
Infineon
πŸ“¦ PG-SOT-23
N-Channel Β· 20 V Β· 1.5 A (Ta) Β· 500 mW (Ta) Β· 250 mOhm at VGS = 4.5 V Β· Β±12 V (recommended) Β· OptiMOS 2 (planar N-channel)

βœ“ In Stock

$0.09 / Unit

View Datasheet β†’

BSS308PEH6327XTSA1

βœ… Drop-In
Infineon
πŸ“¦ PG-SOT-23
Infineon Technologies Β· OptiMOS P (small signal / small power MOSFET) Β· P-Channel Enhancement Mode MOSFET Β· -30 V Β· -2 A (Ta) Β· 80 mΞ© at VGS = -10 V Β· +/-20 V Β· 500 mW (Ta)

βœ“ In Stock

$0.11 / Unit

View Datasheet β†’

BSS84PH6327XTSA2

βœ… Drop-In
Infineon
πŸ“¦ PG-SOT-23
Infineon Technologies Β· BSS84PH6327XTSA2 Β· P-Channel Β· -60 V Β· -170 mA (Ta) Β· 360 mW (Ta) Β· 8 ohm at VGS = -10 V

βœ“ In Stock

$0.1 / Unit

View Datasheet β†’

2N7002L

βœ… Drop-In
onsemi
πŸ“¦ SOT-23-3
N-Channel Enhancement Mode MOSFET Β· 60 V Β· 115 mA (Ta) Β· 7.5 ohm max at VGS = 5V Β· +/-20 V Β· 1 V to 2.5 V Β· 200 mW (Ta), 225 mW max Β· High cell density trench MOSFET

βœ“ In Stock

$0.028 / Unit

View Datasheet β†’

BSS138NH6327XTSA2 Maximum Ratings & Electrical Characteristics

Polarity N-Channel
Operating Mode Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) 60 V
R_DS(on) max @ V_GS=10V 3.5 ohm
Continuous Drain Current (Ta) 230 mA
Power Dissipation (Ta) 360 mW
Package PG-SOT-23 (3-pin)
Mounting Type Surface Mount
Gate-Source Voltage V_GS max Β±20 V
dv/dt Rated Yes
Halogen-Free Yes (per IEC 61249-2-21)
RoHS Compliance Compliant
AEC-Q101 Qualification Qualified
Lead Plating Pb-free
Packaging Tape and Reel

BSS138NH6327XTSA2 Pin Configuration

SOT-23 Package Pinout Diagram SOT-23 3-pin surface mount transistor, JEDEC TO-236. Pin 1 by dot. 1 2 3 SOT-23
Pin 1 Gate β€” MOSFET gate input; logic-level drive, Β±20 V V_GS max
Pin 2 Source β€” Source terminal; connect to ground for low-side switching
Pin 3 Drain β€” Drain terminal; thermal tab electrically connected to drain

Safe Operating Area (estimated, low-power small-signal)

DC Continuous Operation

Typical Applications

BSS138NH6327XTSA2 is suitable for 6 applications: Logic-Level Low-Side Switch, Level Shifter / Signal Translation, LED Driver and Backlight Switch, Analog Switch and Multiplexer Building Block, Flyback / Boost Aux Converter Switch, Automotive ECU Load Driver.

πŸ”§

Logic-Level Low-Side Switch

The BSS138NH6327XTSA2 is a textbook low-side switch for 3.3 V or 5 V MCU outputs driving relays, solenoids, LEDs, and small DC loads. Its enhancement-mode N-channel architecture with V_GS(th) around 1.4 V enables direct gate drive from a logic-level GPIO without a driver stage; the part sits between the load and ground, with the drain tied to the load's negative terminal. At 200 mA load the conduction loss is roughly 140 mW into 3.5 ohm R_DS(on), well below the 360 mW dissipation budget; designers should still derate above 25 C ambient.

🌐

Level Shifter / Signal Translation

The BSS138NH6327XTSA2 is widely used as a unidirectional level shifter between a 3.3 V MCU and a 12 V or 24 V peripheral rail. With the gate driven from the low-voltage domain via a pull-up resistor, the drain can pull a 12 V signal down to ground through the source when the MOSFET turns on, producing a clean inverted logic-level translation. The 60 V V(BR)DSS safely tolerates 12 V and 24 V bus voltages with ample transient margin, and the 3.5 ohm R_DS(on) gives fast edges for sub-MHz digital signals.

πŸ’‘

LED Driver and Backlight Switch

The BSS138NH6327XTSA2 is well suited to low-current LED strings and small backlight arrays where the LED anode ties to a 5 V or 12 V rail and the cathode connects to the MOSFET drain. PWM dimming is supported because the device's low gate charge and small Q_GD produce clean edges at kHz-range PWM frequencies without shoot-through or excessive switching loss. At 230 mA continuous rating it covers single high-brightness LEDs up to roughly 150 mA forward current with adequate thermal headroom.

🎧

Analog Switch and Multiplexer Building Block

The BSS138NH6327XTSA2 in PG-SOT-23 is a classic analog-switch element used in low-leakage signal routing, audio muting, and small multiplexer arrays. With the drain and source used symmetrically, it can pass AC or DC signals up to roughly 60 V PEAK; R_DS(on) of 3.5 ohm introduces minimal series resistance for sub-mA analog signals. Its low gate charge and dv/dt rating suit audio sample-and-hold or test-equipment switching paths.

⚑

Flyback / Boost Aux Converter Switch

The BSS138NH6327XTSA2 is frequently deployed as the primary switch in sub-watt auxiliary converters such as bias supplies, isolated feedback paths, and small flyback or boost stages. The 60 V drain rating tolerates 24 V input buses with avalanche headroom for transformer leakage spikes, while 230 mA continuous drain covers auxiliary rails up to 1-2 W. Switching frequency up to roughly 100 kHz is achievable given the part's modest gate charge and dv/dt ruggedness.

πŸš—

Automotive ECU Load Driver

The BSS138NH6327XTSA2 carries AEC-Q101 qualification, making it directly usable in automotive ECUs for driving indicator LEDs, small relays, and logic-level translation between 3.3 V MCUs and 12 V body-control buses. Its halogen-free Pb-free plating, RoHS compliance, and dv/dt rating satisfy automotive reliability requirements. Engineers should still compute junction temperature rise under worst-case ambient (typically 85 C) using the 360 mW dissipation rating and the SOT-23 thermal resistance.

What is the drain-source breakdown voltage (V(BR)DSS) of BSS138NH6327XTSA2?
The BSS138NH6327XTSA2 has a V(BR)DSS rating of 60 V. According to the Infineon datasheet, this is the maximum drain-to-source voltage the device can block with the gate shorted to source; exceeding 60 V risks avalanche breakdown. This 60 V rating comfortably covers 12 V and 24 V bus rails common in automotive and industrial systems.
What is the maximum continuous drain current of BSS138NH6327XTSA2?
The BSS138NH6327XTSA2 is rated for 230 mA continuous drain current at Ta = 25 C. Power dissipation at 25 C ambient is 360 mW; above 25 C the part derates linearly until Tj max. For sustained loads above 100 mA, verify junction temperature rise with the datasheet derating curve rather than relying on the 25 C figure alone.
What is the R_DS(on) of BSS138NH6327XTSA2?
The BSS138NH6327XTSA2 has a maximum R_DS(on) of 3.5 ohm measured at V_GS = 10 V. At a 200 mA load this yields roughly 140 mW of conduction loss; at logic-level V_GS = 4.5 V the on-resistance is higher (consult the typical curves). 3.5 ohm is typical for the BSS138 small-signal family used in low-power switching.
Where to buy BSS138NH6327XTSA2 online at the best price?
BSS138NH6327XTSA2 is stocked at DigiKey, Mouser, and Octopart-listed distributors as of 2026-09-10. Per the Verified Web Data, DigiKey lists it in active inventory and ships same-day. For lowest unit cost, reels of 3,000 pieces bring the unit price down to the lowest tier; smaller prototype quantities carry the per-piece premium listed above.
What is the lead time for BSS138NH6327XTSA2?
The lead time for BSS138NH6327XTSA2 is typically same-day to 8 weeks depending on distributor stock, as of 2026-09-10. DigiKey shows immediate shipping from local warehouse; allocation may extend lead time during automotive demand spikes. For volume orders, contact Infineon franchised distributors directly for scheduled releases.
Is BSS138NH6327XTSA2 in stock and available?
Yes, BSS138NH6327XTSA2 is currently in stock at major distributors including DigiKey and Mouser, as of 2026-09-10. Both list active inventory with same-day shipping. The lifecycle status is active, not EOL or NRND, so no supply disruption is expected in the near term.
BSS138NH6327XTSA2 vs BSS138 - what is the difference?
The BSS138NH6327XTSA2 is the AEC-Q101 automotive-qualified version of the BSS138 in PG-SOT-23, both from Infineon. Both share the same 60 V V(BR)DSS, 3.5 ohm R_DS(on), and SOT-23 pinout; the 'N' suffix and H6327XTSA2 reel code denote the auto-qualified tape-and-reel variant. The standard BSS138 (without N) is consumer/industrial grade; the NH6327 is preferred for automotive designs.
BSS138NH6327XTSA2 vs 2N7002 - which is better for 3.3V MCU switching?
For 3.3 V MCU-driven low-side switching, both BSS138NH6327XTSA2 and 2N7002 are drop-in compatible in SOT-23 with similar 60 V ratings. The BSS138N variant offers AEC-Q101 automotive qualification and halogen-free Pb-free plating, while the standard 2N7002 is generally lower-cost but lacks auto-grade reliability. Choose BSS138N for automotive or high-reliability industrial, 2N7002 for consumer-cost-sensitive designs.
When should I choose BSS138NH6327XTSA2 over a BSS84 (P-channel) MOSFET?
Choose BSS138NH6327XTSA2 when you need a low-side N-channel switch where the load connects to the positive rail and the MOSFET sits between load and ground. Choose a P-channel BSS84PH6327XTSA2 for high-side switching where the load sits between drain and ground, simplifying gate drive from a 3.3 V or 5 V logic rail. Both are in SOT-23 but are not pin-compatible - their pinouts are mirrored.
What is the best drop-in replacement for BSS138NH6327XTSA2?
The best drop-in replacement for BSS138NH6327XTSA2 in PG-SOT-23 is the onsemi 2N7002 (industry-standard equivalent) or the Infineon 2N7002H6327XTSA2. All three share the same SOT-23 pinout, 60 V V(BR)DSS, and similar R_DS(on); 2N7002 is widely second-sourced. For automotive-grade reliability specifically, stay with the BSS138N H6327 variant or the onsemi NVTFS002N03C with automotive qualification.
Can a 2N7002 replace BSS138NH6327XTSA2 directly?
Yes, a standard 2N7002 in SOT-23 is pin-compatible with BSS138NH6327XTSA2 and shares 60 V V(BR)DSS, though the 2N7002 is typically not AEC-Q101 qualified. For automotive designs requiring AEC-Q101, the Infineon 2N7002H6327XTSA2 carries the same auto-grade qualification as the BSS138N. Confirm R_DS(on) and continuous drain current on the candidate datasheet before substituting.
Where to download BSS138NH6327XTSA2 datasheet PDF?
The official BSS138NH6327XTSA2 datasheet PDF is available from Infineon's product page at https://www.infineon.com/part/BSS138N. Third-party mirrors at alldatasheet.com and digchips.com also host the PDF, but Infineon's site is the authoritative source. The datasheet includes absolute maximum ratings, R_DS(on) curves, switching waveforms, and SOT-23 land-pattern recommendations.
Where can I find the BSS138NH6327XTSA2 pinout?
The BSS138NH6327XTSA2 pinout for the 3-pin PG-SOT-23 is: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (with the thermal tab/pin 3 also serving as the drain). This is the standard SOT-23 N-channel MOSFET pinout, identical to 2N7002. The datasheet's mechanical drawing on page 1 shows the pin-1 marker dot for orientation.
What are the key specifications of BSS138NH6327XTSA2 that engineers should know?
Engineers using BSS138NH6327XTSA2 should know three headline specs: 60 V V(BR)DSS, 230 mA continuous drain current at 25 C, and 3.5 ohm max R_DS(on) at V_GS = 10 V, per the Infineon datasheet. Additional critical parameters include 360 mW power dissipation at Ta, AEC-Q101 qualification, halogen-free Pb-free plating, and Β±20 V V_GS max rating. Logic-level gate drive is supported.
What is the equivalent Infineon part for BSS138NH6327XTSA2 from another brand?
The best cross-brand equivalent for BSS138NH6327XTSA2 is the onsemi 2N7002 (SOT-23, 60 V, ~200 mA), which is pin-compatible and shares the standard SOT-23 N-channel footprint. Both deliver logic-level gate drive and similar R_DS(on). The onsemi NVTFS002N03C is the AEC-Q101 automotive-grade equivalent when Infineon supply is constrained; it uses a slightly different SOT-23 thermal tab layout.

Engineering reference data for BSS138NH6327XTSA2 β€” comparison, design guidance, and compliance information.

Selection Guide

Choose BSS138NH6327XTSA2 when you need an N-channel 60 V logic-level MOSFET in PG-SOT-23 with AEC-Q101 automotive qualification and halogen-free Pb-free plating - the canonical choice for MCU-driven low-side switching in automotive, industrial, and consumer designs. Choose 2N7002H6327XTSA2 (Infineon) as a qualified alternate source with slightly higher R_DS(on); choose onsemi 2N7002 for the lowest cost in consumer-grade applications where AEC-Q101 is not required. Choose BSS214NH6327XTSA1 only if you are switching below 20 V. Choose BSS84PH6327XTSA2 when you need a high-side P-channel switch in the same SOT-23 footprint. For new designs requiring higher continuous current, consider IRLML2803TRPBF (lower R_DS(on)) instead.

Comparison with Alternatives

Parameter This Product 2N7002H6327XTSA2 BSS214NH6327XTSA1 BSS84PH6327XTSA2 2N7002
Package PG-SOT-23 (3-pin) PG-SOT-23 - same PG-SOT-23 - same PG-SOT-23 - same SOT-23-3 - same footprint
Brand Infineon Infineon Infineon Infineon onsemi
Polarity N-Channel N-Channel N-Channel P-Channel (mirrored pinout) N-Channel
V(BR)DSS 60 V 60 V 20 V 60 V 60 V
AEC-Q101 Qualification Yes Yes Yes Yes No (standard grade)
Logic-Level Gate Drive Yes (V_GS(th) ~1.4V) Yes Yes Yes Yes

Key Differentiators

  • AEC-Q101 automotive qualification in standard SOT-23 (vs 2N7002 (standard onsemi))
  • Lower R_DS(on) than standard 2N7002 (vs 2N7002H6327XTSA2)
  • 60 V V(BR)DSS versus BSS214N 20 V rating (vs BSS214NH6327XTSA1)

Design Notes

Estimated: at 230 mA continuous load in PG-SOT-23 with R_DS(on) = 3.5 ohm, conduction loss is roughly 185 mW, leaving only ~175 mW margin to the 360 mW Ta rating at 25 C. Junction temperature rise at 25 C ambient is about 130 C/W Γ— 0.185 W β‰ˆ 24 C, which is acceptable, but at 85 C ambient the part derates to ~190 mA continuous. Always compute Tj using the datasheet thermal resistance and derate current accordingly for hot environments.

Use a standard SOT-23 land pattern with the drain tab tied to a small copper pour (at least 10 mmΒ² of 1 oz copper) to spread heat. Place the gate resistor within 5 mm of pin 1 and connect the source pin directly to a ground plane via the shortest possible via. Avoid running signal traces under the package thermal tab to prevent leakage to the drain node.

Do not exceed Β±20 V on the gate pin - the datasheet specifies V_GS(max) = Β±20 V, and transient overshoot from MCU pin toggling with parasitic inductance can damage the gate oxide. Add a 10 kohm gate pull-down resistor to keep the MOSFET off when the MCU GPIO floats during reset or power-up; otherwise the part may partially turn on from leakage, causing unintended load activation.

For switching applications above 10 kHz, minimize the gate-drive loop area by placing the gate resistor and decoupling capacitor directly at pin 1. Keep the source connection (pin 2) short to ground to reduce common-source inductance, which otherwise causes gate-drive ringing and possible dv/dt-induced turn-on. A 100 ohm gate resistor typically suffices to dampen ringing in SOT-23 layouts.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

RoHS compliant and Pb-free lead plating per Infineon datasheet. AEC-Q101 qualified for automotive applications. Halogen-free per IEC 61249-2-21. dv/dt rated. Lifecycle status active as of 2026-09-10.

Data verified on: 2026-09-10 β€” data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon BSS138NH6327XTSA2 BSS138N 2N7002 2N7002H6327XTSA2 BSS214NH6327XTSA1 BSS308PEH6327XTSA1 BSS84PH6327XTSA2 IRLML2803TRPBF onsemi N-channel MOSFET enhancement-mode MOSFET small-signal transistor SIPMOS PG-SOT-23 SOT-23-3 AEC-Q101 IEC 61249-2-21 RoHS Pb-free halogen-free dv/dt rated logic-level gate drive low-side switch level shifter LED driver analog switch automotive ECU drain-source breakdown voltage R_DS(on) continuous drain current V_GS(th) field-effect transistor
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