BSS205NH6327XTSA1 vs BSZ15DC02KDHXTMA1 Comparison

Detailed side-by-side comparison of BSS205NH6327XTSA1 by Infineon and BSZ15DC02KDHXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS205NH6327XTSA1 BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 βœ“ Active
Infineon
BSZ15DC02KDHXTMA1 BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 - 20V Complementary N+P MOSFET | Infineon

BSZ15DC02KDHXTMA1 βœ“ Active

Specification Comparison

Parameter BSS205NH6327XTSA1 BSZ15DC02KDHXTMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.12 $0.74
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSS205NH6327XTSA1 BSZ15DC02KDHXTMA1
Transistor Type N-Channel MOSFET N-Channel + P-Channel (complementary pair)
Package PG-SOT23 (SC-59, TO-236-3), 3-pin PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad)
Mounting Type Surface Mount Surface Mount
Drain-Source Voltage V<sub>DS</sub> 20 V β€”
Continuous Drain Current I<sub>D</sub> (Ta) 2.5 A β€”
Power Dissipation P<sub>D</sub> (Ta) 500 mW β€”
R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) 85 mΞ© β€”
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: Vgs(th) typical value] β€”
Operating Temperature Range -55 Β°C to +150 Β°C (junction) β€”
Gate Drive Voltage Logic-level compatible β€”
Qualification AEC-Q101 β€”
Lead Plating Pb-free β€”
RoHS Compliance Compliant β€”
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) β€”
Packaging Tape & Reel (H6327) β€”
Technology β€” OptiMOSβ„’2 (N-ch) + OptiMOSβ„’-P2 (P-ch)
Drain-to-Source Voltage (VDS) Max β€” 20 V
N-Channel Continuous Drain Current (ID) β€” 5.1 A
P-Channel Continuous Drain Current (ID) β€” 3.2 A
N-Channel RDS(on) Max β€” [DATA_NEEDED: N-ch RDS(on) value in mohm]
P-Channel RDS(on) Max β€” 55 mOhm (per Infineon part summary)
Gate Drive Level β€” Super Logic level, 2.5 V rated
Configuration β€” Common drain (back-to-back source pair)
Total Package Power Dissipation (PD) β€” 2.5 W @ 25 C (per DigiKey listing)
Operating Junction Temperature β€” -55 C to +175 C
Avalanche Rated β€” Yes
Automotive Qualification β€” AEC-Q101 qualified
Lead-Free / RoHS β€” Yes / RoHS compliant

Datasheets & Resources

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