BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon
MPN: BSS205NH6327XTSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.34 | $3.40 |
| 100 | $0.21 | $21.00 |
| 500 | $0.16 | $80.00 |
| 1,000 | $0.12 | $120.00 |
BSS205NH6327XTSA1 Overview
A small-signal N-channel MOSFET is a voltage-controlled semiconductor switch in which a gate-source voltage modulates the conductance of an n-type channel between source and drain. Small-signal MOSFETs are typically used for low-current switching (<5 A), level shifting, load switching, and analog signal multiplexing. They sit within the broader hierarchy: small-signal MOSFET → discrete MOSFET → discrete semiconductor → power management component. The BSS205N family is specifically engineered for space-constrained switching tasks where R<sub>DS(on)</sub> per mm², fast switching, and automotive-grade reliability matter.
Key electrical specifications include a drain-source breakdown voltage V<sub>(BR)DSS</sub> of 20 V, maximum continuous drain current of 2.5 A at 25 °C ambient, R<sub>DS(on)</sub> maximum of 85 mΩ at V<sub>GS</sub> = 4.5 V (per the Infineon product page for the BSS205N family), and a typical gate threshold V<sub>GS(th)</sub> in the 1 V region. The PG-SOT23 footprint is one of the industry's most widely adopted 3-pin SMD packages, simplifying PCB layout and second-source sourcing.
The BSS205N uses trench-based PowerMOS technology that delivers low on-resistance in a small outline, trading off higher R<sub>DS(on)</sub> than larger packages for an exceptionally small footprint. With a maximum power dissipation of 500 mW, the part is intended for pulse-load and low-duty-cycle switching applications rather than continuous high-current conduction.
Typical applications include load switching in portable and battery-powered devices, power-rail multiplexing, USB power switching, LED backlight drivers, and signal-level shifting between logic domains. Its AEC-Q101 qualification also extends use into automotive body electronics and infotainment subsystems.
When designing with this part, derate drain current aggressively at elevated ambient temperatures and respect the 500 mW package dissipation limit. Use a gate resistor to control switching transients and protect against dv/dt-induced turn-on.
This page synthesizes distributor pricing, drop-in equivalents, and design considerations not aggregated on the manufacturer datasheet alone.
Drop-in alternatives for BSS205NH6327XTSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSS205NH6327XTSA1 (same form factor and footprint) — differing in Package, Technology, FET Type, Operating Temperature Range, Continuous Drain Current (ID).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSS205NH6327XTSA2
✅ Drop-In📋 Reference alternative (not in catalog)
BSS205NL6327
✅ Drop-In📋 Reference alternative (not in catalog)
BSS169H6327XTSA1
✅ Drop-In✓ In Stock
$0.15 / Unit
View Datasheet →NTR4101PT1G
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Si2312CDS-T1-E3
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DMG3415U-7
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BSS205NH6327XTSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSS205NH6327XTSA1 |
| Transistor Type | N-Channel MOSFET |
| Package | PG-SOT23 (SC-59, TO-236-3), 3-pin |
| Mounting Type | Surface Mount |
| Drain-Source Voltage V<sub>DS</sub> | 20 V |
| Continuous Drain Current I<sub>D</sub> (Ta) | 2.5 A |
| Power Dissipation P<sub>D</sub> (Ta) | 500 mW |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) | 85 mΩ |
| Operating Temperature Range | -55 °C to +150 °C (junction) |
| Gate Drive Voltage | Logic-level compatible |
| Qualification | AEC-Q101 |
| Lead Plating | Pb-free |
| RoHS Compliance | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (H6327) |
BSS205NH6327XTSA1 Pin Configuration
| Pin 1 | Gate (G) — Gate control input; logic-level compatible; tie to driver with 10-100 kΩ pull-down for defined off-state |
| Pin 2 | Source (S) — Source terminal; typically connected to GND in low-side switching or to load in high-side switching |
| Pin 3 | Drain (D) — Drain terminal; connected to load or supply depending on switching topology |
Typical Applications
BSS205NH6327XTSA1 is suitable for 7 applications: USB Power Switch / Load Switch, Battery-Powered Portable Device Switching, Automotive Body Electronics (12V Rails), LED Backlight / Indicator Driver, Power-Rail Multiplexing / Source Selection, Logic-Level Translation / Signal Mux, Small DC Motor / Solenoid Driver.
USB Power Switch / Load Switch
The BSS205NH6327XTSA1 is well suited as a high-side load switch for USB VBUS rails in portable devices. Its 20 V V<sub>DS</sub> rating comfortably exceeds 5 V VBUS transients, and its 85 mΩ max R<sub>DS(on)</sub> at V<sub>GS</sub>=4.5 V keeps conduction loss at ~0.21 W at 1.5 A — well within the 500 mW dissipation budget at moderate duty. Designers place the part between the system 5 V rail and the USB connector, driving the gate from a GPIO through a 100 kΩ pull-down to guarantee a defined off-state. The AEC-Q101 qualification supports in-vehicle USB charging ports as well. For hot-plug inrush control, add a small RC delay on the gate to limit dV/dt and protect downstream capacitors.
Recommended
Battery-Powered Portable Device Switching
In battery-powered designs, the BSS205NH6327XTSA1 acts as a low-loss disconnect switch between the Li-ion cell and downstream regulators. With a 4.5 V gate drive available directly from standard logic, no charge pump is needed. Its logic-level V<sub>GS(th)</sub> ensures full enhancement at 3 V V<sub>GS</sub>, yielding low R<sub>DS(on)</sub> even as the battery drops toward cutoff. The 500 mW dissipation cap is rarely exceeded because portable loads are typically ≤1 A. Pair it with a TVS diode on the drain to absorb inductive kickback from motors or speakers downstream, and place a 100 kΩ gate pull-down to guarantee the FET stays off during MCU reset.
Recommended
Automotive Body Electronics (12V Rails)
The BSS205NH6327XTSA1 is qualified to AEC-Q101, making it a defensible choice for 12 V automotive body modules such as interior lighting drivers, mirror controllers, and small accessory switches. Its 20 V V<sub>DS</sub> rating tolerates 12 V jump-start transients (up to ~16 V) and provides adequate margin against load-dump events when paired with a TVS clamp. Designers typically use this part as a low-side switch for LED strings ≤500 mA, where the 85 mΩ R<sub>DS(on)</sub> keeps thermal dissipation negligible. For PWM-dimmed lighting at 200 Hz, switching losses are minimal because the SOT-23 input capacitance is low. Always add reverse-battery and jump-start protection at the module input.
Recommended
LED Backlight / Indicator Driver
For LED backlights and panel indicator strings, the BSS205NH6327XTSA1 can serve as a low-side current sink switch controlled by an MCU GPIO. Because the part is logic-level compatible, no gate driver is required — the MCU pin drives the gate directly with a small series resistor to control inrush. The 2.5 A rating comfortably supports multi-LED strings up to ~500 mA total with PWM dimming. At 50% duty cycle, the average dissipation is roughly I² × R × duty = 0.25² × 0.085 × 0.5 ≈ 3 mW — well within thermal limits. The SOT-23 footprint enables placement directly adjacent to the LED connector for compact layouts.
Recommended
Power-Rail Multiplexing / Source Selection
In dual-source power designs (e.g., USB-C input vs. wireless charging coil), the BSS205NH6327XTSA1 implements back-to-back low-loss rail selection. Two parts in series block reverse current when both sources are present, and a single GPIO controls which path conducts. The 85 mΩ R<sub>DS(on)</sub> per FET adds only 170 mΩ total in the active path, an acceptable trade-off versus a Schottky OR-ing solution that drops 300+ mV. The AEC-Q101 rating allows the same circuit topology in automotive dual-battery systems. Place gate resistors (10 kΩ) at each gate to prevent oscillation during fast switching events.
Recommended
Logic-Level Translation / Signal Mux
The BSS205NH6327XTSA1 functions as a low-loss analog signal switch in level-shifting and multiplexing circuits up to 20 V amplitude. Its low on-resistance flatness across V<sub>GS</sub> drive levels minimizes signal distortion in audio and sensor multiplexing applications. For low-frequency (<10 kHz) signal routing, two back-to-back FETs isolate grounds between subsystems. The SOT-23 footprint enables dense multiplexer arrays on small PCBs, and the AEC-Q101 qualification supports automotive sensor aggregation. Designers should observe the maximum signal amplitude of 20 V — adequate for 12 V analog rails but not for higher-voltage industrial signaling.
Recommended
Small DC Motor / Solenoid Driver
For small DC motors, solenoids, or relays drawing up to 2 A continuous, the BSS205NH6327XTSA1 provides a compact low-side driver that interfaces directly with 3.3 V or 5 V MCUs. The logic-level V<sub>GS(th)</sub> ensures full enhancement with no charge pump, and the 20 V V<sub>DS</sub> rating tolerates the back-EMF of inductive loads when paired with a flyback diode. At 1 A motor current, conduction loss is I² × R = 1 × 0.085 = 85 mW, leaving substantial thermal margin. The SOT-23 footprint is ideal for the densely packed control boards of consumer appliances and small robotics. Always include a freewheeling diode across inductive loads to protect the FET from avalanche breakdown.
Recommended
Recommended Products Summary
Engineering reference data for BSS205NH6327XTSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSS205NH6327XTSA2 | BSS205NL6327 | BSS169H6327XTSA1 | NTR4101PT1G | Si2312CDS-T1-E3 | DMG3415U-7 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Vishay Intertechnology | Diodes Incorporated |
| Package | PG-SOT23 (3-pin) | PG-SOT23 (3-pin) - same | PG-SOT23 (3-pin) - same | PG-SOT23 (3-pin) - same | SOT-23 (3-pin) - same | SOT-23 (3-pin) - same | SOT-23 (3-pin) - same |
| Drain-Source Voltage V<sub>DS</sub> | 20 V | 20 V | 20 V | 60 V | 20 V | 20 V | 20 V |
| Continuous Drain Current I<sub>D</sub> | 2.5 A | 2.5 A | 2.5 A | 1 A | 3.2 A | 6 A | 4 A |
| Power Dissipation P<sub>D</sub> | 500 mW | 500 mW | 500 mW | 500 mW | 1.25 W | 1.6 W | 1 W |
| AEC-Q101 Qualification | Yes | Yes | Yes | Yes | Yes | Yes | No |
| Pinout (G-S-D) | G-S-D | G-S-D | G-S-D | G-S-D | G-S-D | G-S-D | G-S-D |
| Approx. Unit Price @ 1000 pcs | $0.12 | ~$0.12 | ~$0.13 | ~$0.18 | ~$0.20 | ~$0.22 | ~$0.10 |
Key Differentiators
- AEC-Q101 qualified with full automotive traceability (vs DMG3415U-7)
- Higher drain current rating than higher-V<sub>DS</sub> family member (vs BSS169H6327XTSA1)
- Lower R<sub>DS(on)</sub> than legacy 2N7002/BSS138 class (vs BSS138 / 2N7002)
Design Notes
Estimated: at 2 A continuous load with R<sub>DS(on)</sub> = 85 mΩ, conduction loss is I² × R = 4 × 0.085 = 0.34 W. With the PG-SOT23 thermal resistance of approximately 250 °C/W on a standard FR4 test board, junction temperature rises roughly 85 °C above ambient — at 25 °C ambient, T<sub>J</sub> reaches ~110 °C, well within the 150 °C maximum but with limited margin. For sustained 2 A loads, reduce duty cycle, lower ambient, or increase PCB copper pour around the source pin (pin 2) to drop θ<sub>JA</sub> toward 150 °C/W. Derate to 1.5 A continuous above 50 °C ambient.
The PG-SOT23 package dissipates primarily through the source pin (pin 2). Pour a copper thermal land on the source pad and stitch vias to the opposite copper layer to drop thermal resistance. Keep the gate trace short and away from the drain node to minimize gate-drain coupling that could cause dv/dt-induced turn-on. Place a 100 kΩ gate-to-source pull-down resistor on every BSS205NH6327XTSA1 to guarantee a defined off-state during MCU reset or power-up sequencing — never leave the gate floating.
Do not operate BSS205NH6327XTSA1 above 20 V V<sub>DS</sub> — avalanche breakdown will degrade the part. For inductive loads (motors, solenoids, relays), always include a flyback diode across the load or a TVS clamp on the drain to absorb back-EMF. Note that the 500 mW P<sub>D</sub> rating is at Ta=25 °C and derates with temperature; refer to the datasheet's derating curve. The part is pin-compatible with most SOT-23 N-channel MOSFETs, but verify pinout against the G-S-D convention before substituting — some competitors (e.g., IRLML2502 variants) use a different pinout on the same footprint.
Compliance Information
AEC-Q101 (automotive) qualified per Infineon datasheet and DigChip datasheet summary. Pb-free lead plating, RoHS compliant. Halogen-free status not explicitly confirmed in verified web data — set to unknown.
