BSS214NWH6327XTSA1 vs BSP125H6327XTSA1 Comparison
Detailed side-by-side comparison of BSS214NWH6327XTSA1 by Infineon and BSP125H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSS214NWH6327XTSA1 | BSP125H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.15 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSS214NWH6327XTSA1 | BSP125H6327XTSA1 |
| Series | OptiMOS | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | SIPMOS (Small Signal Power MOSFET) |
| Drain-to-Source Voltage (Vdss) | 20 V | β |
| Continuous Drain Current (Id) @ 25C | 1.5 A | β |
| Rds(on) Max @ Vgs=4.5V | 250 mOhm | β |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | β |
| Power Dissipation (Pd) @ Ta=25C | 500 mW | β |
| Package | PG-SOT323 (SOT-323-3) | PG-SOT223-4 (SOT-223-3 + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | -55C to +150C (TJ) |
| Qualification | AEC-Q101 (Automotive) | Automotive / Industrial grade |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID) | β | 120 mA (Ta) |
| Power Dissipation (PD) | β | 1.8 W (Ta) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Configuration | β | Single |
| Channel Mode | β | Enhancement |
| MSL Level | β | 1 (Unlimited) |