BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon
MPN: BSS214NWH6327XTSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.38 | $3.80 |
| 100 | $0.3 | $30.00 |
| 500 | $0.24 | $120.00 |
| 1,000 | $0.19 | $190.00 |
| 3,000 | $0.15 | $450.00 |
BSS214NWH6327XTSA1 Overview
A small-signal MOSFET is a discrete field-effect transistor that uses an insulated gate (in this case, metal-oxide) to control current flow between the drain and source terminals. The 'OptiMOS' family specifically refers to Infineon's optimized trench MOSFET technology that achieves very low on-state resistance per unit silicon area. Small-signal MOSFETs occupy the product-type hierarchy as follows: MOSFET -> discrete semiconductor -> transistor -> semiconductor device, and the BSS214NW is positioned as a 'small-signal / small-power' switching element suitable for sub-2 A loads.
Key features include a logic-level gate drive (Vgs(th) compatible with 2.5 V/4.5 V rails typical of microcontrollers), 500 mW power dissipation at Ta=25C, low gate charge for fast switching, and an integrated ESD-protected gate. The trench cell structure provides industry-leading figure-of-merit (FOM = Rds(on) x Qg), minimizing both conduction and switching losses in PWM and load-switch topologies.
Typical applications include DC-DC converter synchronous rectification, load switching in portable and battery-powered equipment, motor-driver low-side switches, LED backlight dimming, and USB/charger power-path management. The 20 V rating makes it compatible with 5 V and 12 V rails, while the SOT-323 footprint supports miniaturized designs in wearables and IoT end nodes.
When designing with this device, derate power dissipation for ambient temperature using the thermal resistance specified in the datasheet. For switching applications, drive the gate with a sharp 10 V (or logic-level equivalent) edge to minimize transition losses and avoid partial-turn-on regions that cause shoot-through in synchronous-rectifier configurations.
Drop-in alternatives for BSS214NWH6327XTSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSS214NWH6327XTSA1 (same form factor and footprint) β differing in Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Continuous Drain Current (ID).
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BSS214NWL6327
β Drop-Inπ Reference alternative (not in catalog)
BSL606SNH6327XTSA1
β Drop-Inβ In Stock
$0.19 / Unit
View Datasheet βBSP125H6327XTSA1
β Drop-Inβ In Stock
$0.38 / Unit
View Datasheet βBSP89H6327XTSA1
β Drop-Inβ In Stock
$0.39 / Unit
View Datasheet βBSR315PH6327XTSA1
β Drop-Inβ In Stock
$0.22 / Unit
View Datasheet βBSS214NWH6327XTSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSS214NWH6327XTSA1 |
| Series | OptiMOS |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (Vdss) | 20 V |
| Continuous Drain Current (Id) @ 25C | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | 500 mW |
| Package | PG-SOT323 (SOT-323-3) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55C to +150C (junction) |
| Qualification | AEC-Q101 (Automotive) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
BSS214NWH6327XTSA1 Pin Configuration
| Pin 1 | Gate β Gate control input (logic-level compatible) |
| Pin 2 | Source β Source terminal (connected to GND in low-side switching) |
| Pin 3 | Drain β Drain terminal (load connection in low-side switching) |
Safe Operating Area (SOT-323)
Typical Applications
BSS214NWH6327XTSA1 is suitable for 7 applications: DC-DC Converter Synchronous Rectifier, Load Switch in Portable Electronics, Automotive Body Electronics (AEC-Q101), LED Backlight Dimming Switch, USB Power-Path Management, Industrial Sensor Power Switching, IoT Battery Power-Path Selector.
DC-DC Converter Synchronous Rectifier
The BSS214NWH6327XTSA1 is well-suited as the low-side synchronous rectifier in sub-2 A buck converters for portable and IoT devices. Its 250 mOhm Rds(on) at Vgs=4.5 V keeps conduction losses below 100 mW at 1 A load, while the small Qg and Qgd figures enable sub-20 ns switching transitions at 1 MHz. Place the part on the low-side return path with a 10 V gate drive from the controller's boot strap. Unlike Schottky diode replacements, the synchronous MOSFET eliminates forward-voltage drop and improves light-load efficiency; trade-off is the need for dead-time control to prevent shoot-through.
Recommended
Load Switch in Portable Electronics
The BSS214NWH6327XTSA1's logic-level gate threshold and SOT-323 footprint make it a textbook load-switch for power-rail gating in smartphones, wearables, and tablets. Connect the gate directly to a 1.8 V or 3.3 V GPIO to control a downstream 5 V rail at up to 1.5 A. The 20 V VDS comfortably exceeds 5 V and 12 V rails with transient margin. Designers should add a 100 kohm gate pull-down resistor to hold the switch off during MCU reset, and consider a TVS on the load side if hot-plug events are expected. Compared to a P-channel load switch, this N-channel design lowers Rds(on) by ~3x at the same die size.
Recommended
Automotive Body Electronics (AEC-Q101)
AEC-Q101 qualification makes the BSS214NWH6327XTSA1 suitable for 12 V automotive subsystems including interior lighting, mirror control, and seat-adjustment motors. The 20 V VDS handles 12 V battery plus transient spikes up to the ISO 7637-2 load-dump profile when paired with a TVS clamp. The SOT-323 package fits behind the rear-view mirror housing where board space is tight. Engineers should derate continuous current to 50% of datasheet maximum and verify junction temperature stays below 150C at worst-case ambient.
Recommended
LED Backlight Dimming Switch
The BSS214NWH6327XTSA1 operates at audio-frequency PWM (200 Hz to 20 kHz) to dim LED strings in TFT backlights or indicator clusters. The fast rise/fall times and low gate charge keep the PWM transition region narrow, preserving color accuracy even at 1% duty cycle. Place the part in the low-side return path and drive the gate directly from a microcontroller timer channel. Verify that the LED string voltage plus any inductive kick stays below the 20 V VDS rating with adequate derating at high temperature.
Recommended
USB Power-Path Management
In USB 2.0/3.0 power-path switches and OTG boost converters, the BSS214NWH6327XTSA1 can serve as the high-side or low-side switch element when paired with a charge controller. The 1.5 A rating covers USB Type-A 500 mA downstream and most BC1.2 charging modes. Place the MOSFET between the system 5 V rail and the VBUS pin, with the gate controlled by the charge-pump or controller's enable output. Add a TVS diode for ESD protection at the VBUS connector.
Recommended
Industrial Sensor Power Switching
Industrial 4-20 mA loop-powered sensors and 24 V proximity switches benefit from the BSS214NWH6327XTSA1 as a low-side enable element, but only when system voltage stays below 20 V. For 24 V nominal industrial rails, select a 30 V or 40 V alternative from the same OptiMOS family. The SOT-323 package supports reflow soldering in fully automated SMT lines. Add a 10 kohm gate pull-down to prevent floating-gate turn-on during controller brown-out events.
Recommended
IoT Battery Power-Path Selector
In coin-cell or Li-ion powered IoT end nodes, the BSS214NWH6327XTSA1 can act as the OR-ing FET between a battery and a USB charger input, or as the load-disconnect switch during deep sleep. The logic-level gate drive allows direct GPIO control from an ultra-low-power MCU. At 1.5 A rating, the part handles peak radio transmission currents for LoRa, BLE, or Wi-Fi modules. Use a 100 kohm pull-down to keep the FET off during MCU reset and minimize quiescent leakage to sub-1 uA.
Recommended
Recommended Products Summary
Engineering reference data for BSS214NWH6327XTSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSS214NWL6327 | BSL606SNH6327XTSA1 | BSP125H6327XTSA1 | BSR315PH6327XTSA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-SOT323 | PG-SOT323 | PG-SOT323 | PG-SOT323 | PG-SOT323 |
| VDS Max | 20 V | 20 V | 60 V | 600 V (depletion mode) | 60 V (P-channel) |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel (depletion) | P-Channel |
| Automotive Qualified | Yes (AEC-Q101) | No (commercial) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- Automotive-grade qualification in SOT-323 footprint (vs BSS214NWL6327)
- Lower on-resistance per unit silicon area in 20 V class (vs Legacy BSS138 (SOT-23))
- Logic-level gate drive compatible with 1.8V/3.3V MCUs (vs BSL606SNH6327XTSA1 (60V SOT-323))
Design Notes
The SOT-323 package has a typical thermal resistance (RthJA) of approximately 200 C/W on a minimal JEDEC test board, meaning the 500 mW power dissipation at 25C ambient translates to a 100C junction temperature rise. Estimated: at Id=1 A continuous and Rds(on)=250 mOhm, conduction loss is 250 mW, yielding Tj rise of 50C above ambient. For continuous loads above 0.5 A, attach a copper pad heatsink of at least 50 mm^2 on the drain pad (pin 3) to reduce RthJA and prevent thermal shutdown.
Place the gate drive trace on the bottom layer with a width of at least 0.2 mm to minimize parasitic inductance. Keep the gate loop area (gate-driver-to-gate-to-source-pin-back-to-driver) under 5 mm^2 to avoid ringing that can cause partial turn-on. Add a 100 kohm gate-to-source pull-down resistor to hold the MOSFET off during MCU reset or power-up glitches. The drain and source traces should be sized to carry 1.5 A continuous with < 30 C copper rise (approximately 1 mm width per amp on 1 oz copper).
Do not exceed the 20 V VDS rating under any transient condition including inductive kickback. For switching inductive loads (relays, solenoids, motors), always place a flyback diode or TVS clamp directly across the load before the drain pin. Note that the gate is ESD-sensitive (HBM Class 1C typical); handle the part in ESD-safe environments and avoid touching pins during assembly. Verify Vgs(th) on first articles if using the part at the low end of the logic-level range (1.8 V GPIO drive).
Compliance Information
AEC-Q101 (automotive grade MOSFET equivalent) qualification confirmed by Infineon product family datasheet and Arrow.com distributor listing. RoHS compliance per DigiKey and Mouser product listings. Halogen-free status not explicitly stated in web data.
