BSS214NWH6327XTSA1 vs IGD08N120S7ATMA1 Comparison
Detailed side-by-side comparison of BSS214NWH6327XTSA1 by Infineon and IGD08N120S7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSS214NWH6327XTSA1 | IGD08N120S7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | IGBTs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.15 | $1.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSS214NWH6327XTSA1 | β |
| Series | OptiMOS | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | Trench Field Stop, 7th generation |
| Drain-to-Source Voltage (Vdss) | 20 V | β |
| Continuous Drain Current (Id) @ 25C | 1.5 A | β |
| Rds(on) Max @ Vgs=4.5V | 250 mOhm | β |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | β |
| Power Dissipation (Pd) @ Ta=25C | 500 mW | β |
| Package | PG-SOT323 (SOT-323-3) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | β |
| Qualification | AEC-Q101 (Automotive) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Product Family | β | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | β | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | β | 24 A |
| Pulsed Collector Current (Icm) | β | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | β | 106 W |
| Gate-Emitter Voltage (Vge max) | β | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | β | 1.65 V |
| Co-packaged Diode | β | Yes (anti-parallel emitter diode) |
| Operating Junction Temperature | β | -40C to +175C (industry grade) |
| Configuration | β | Single |