BSS316NH6327XTSA1 vs BSL316CH6327XTSA1 Comparison
Detailed side-by-side comparison of BSS316NH6327XTSA1 by Infineon and BSL316CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSL316CH6327XTSA1
BSL316CH6327XTSA1 - 30V 1.5A Complementary MOSFET | Infineon
BSL316CH6327XTSA1 β ActiveSpecification Comparison
| Parameter | BSS316NH6327XTSA1 | BSL316CH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.13 | $0.22 |
| FET Type | N-Channel, Enhancement Mode | β |
| Technology | OptiMOS 2 (Trench) | OptiMOS low-voltage MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Drain-Source On-Resistance RDS(on) max | 160 mOhm at VGS=10V, ID=1.4A | β |
| Gate-Source Threshold Voltage VGS(th) typ | 2 V at ID=3.7 uA | β |
| Total Gate Charge (Qg) | 600 pC at VGS=5 V | β |
| Input Capacitance (Ciss) | 94 pF at VDS=15 V | β |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: reverse transfer capacitance] | β |
| Maximum Power Dissipation (PD) at TA=25C | 500 mW | β |
| Operating Junction Temperature Range | -55 C to +150 C | β |
| Package | PG-SOT23 (SOT-23-3) | PG-TSOP6-6 (TSOP6, 6-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Lead Plating | Pb-free (Matte Tin) | β |
| MSL Level | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 qualified | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS small-signal complementary MOSFET |
| Configuration | β | Complementary pair (1 N-channel + 1 P-channel in one package) |
| Continuous Drain Current (N-channel ID) | β | 1.4 A |
| Continuous Drain Current (P-channel ID) | β | 1.5 A |
| Total Power Dissipation (Ptot) | β | 500 mW |
| Operating Temperature | β | -55C to +150C (junction) |
| Channel Type | β | N-channel + P-channel (dual) |
| Pin Count | β | 6 |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) min/typ/max] |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |