BSS83PH6327XTSA1 vs BSS84PH6327XTSA2 Comparison
Detailed side-by-side comparison of BSS83PH6327XTSA1 by Infineon and BSS84PH6327XTSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSS83PH6327XTSA1 | BSS84PH6327XTSA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.11 | $0.10 |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal-Oxide Semiconductor) | β |
| Drain-Source Voltage (VDS) | -60 V | β |
| Continuous Drain Current (ID) at TA=25C | 330 mA | β |
| Pulsed Drain Current (IDM) | 1.3 A | β |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 2.0 ohm (max) | β |
| Gate-Source Threshold Voltage (VGS(th)) | -1 V to -2.5 V (typ) | β |
| Gate-Source Voltage (VGS) max | +/- 20 V | β |
| Power Dissipation (PD) at TA=25C | 360 mW | β |
| Operating Junction Temperature | -55 C to +150 C | β |
| Package | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | Automotive grade per Infineon | AEC-Q101 (Automotive) |
| Process Technology | SIPMOS / OptiMOS | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSS84PH6327XTSA2 |
| Drain-to-Source Voltage (VDS) | β | -60 V |
| Continuous Drain Current (ID) | β | -170 mA (Ta) |
| Power Dissipation (PD) | β | 360 mW (Ta) |
| On-State Resistance (RDS(on)) max | β | 8 ohm at VGS = -10 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-to-Source Voltage (VGS) | β | +/-20 V |
| Operating Temperature | β | -55C to +150C |
| Technology Family | β | SIPMOS OptiMOS |
| Polarity | β | P-Channel Enhancement Mode |
| Lead-Free | β | Yes |