BSS84PH6327XTSA2 - -60V P-Ch MOSFET 170mA SOT-23 | Infineon
MPN: BSS84PH6327XTSA2 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.35 | $3.50 |
| 100 | $0.24 | $24.00 |
| 500 | $0.18 | $90.00 |
| 1,000 | $0.14 | $140.00 |
| 3,000 | $0.1 | $300.00 |
BSS84PH6327XTSA2 Overview
A P-channel MOSFET (PMOS) is a metal-oxide-semiconductor field-effect transistor in which the conducting channel is formed by hole carriers and the source-drain current flows when the gate is pulled below the source potential. PMOS parts serve as high-side switches in load-switch, level-shift, and power-rail inversion topologies; they sit within the broader semiconductor hierarchy of discrete transistors, MOSFETs, and small-signal FETs. The BSS84P family targets compact, low-current switching where N-channel equivalents would otherwise require a charge pump or bootstrap driver.
Key specifications include a -60 V drain-to-source breakdown, 8 ohm maximum on-state resistance at VGS = -10 V, and a logic-level threshold that allows direct drive from 1.8 V to 5 V microcontroller GPIO. The dv/dt and avalanche ratings simplify protection design in inductive loads such as relays, solenoids, and small DC motors. The PG-SOT23 footprint measures approximately 2.9 mm x 1.5 mm with a typical thermal resistance of around 250 C/W, keeping the part within its 360 mW power budget when used as a low-duty-cycle signal switch.
Architecturally, the device uses Infineon's planar SIPMOS process, which combines P-channel polarity with industry-standard SOT-23 pinning for PCB layout reuse across both P and N-channel small-signal designs. The qualified operating temperature range of -55C to +150C enables under-hood and industrial control deployments beyond commercial-only small-signal MOSFETs.
Typical applications include automotive load switching, USB power-distribution switches, battery-polarity protection, signal-level shifting between 3.3 V and 12 V domains, and relay/solenoid driver stages. The logic-level gate makes it equally suited to direct GPIO control in microcontroller-based designs and to discrete inverter stages in motor-control circuits.
When designing with this part, observe the maximum gate-to-source voltage of +/-20 V and confirm that peak avalanche energy stays within datasheet limits for inductive loads. A 100 kohm gate pull-up resistor is recommended for fail-safe off-state behavior when the driving GPIO enters high-impedance during reset.
Drop-in alternatives for BSS84PH6327XTSA2 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSS84PH6327XTSA2 (same form factor and footprint) β differing in Package, Polarity, Technology, FET Type, Channel Mode.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BSS84P H6327
β Drop-Inπ Reference alternative (not in catalog)
BSS84P L6327
β Drop-Inπ Reference alternative (not in catalog)
BSS84PH6327XTSA1
β Drop-Inπ Reference alternative (not in catalog)
DMG2305UX-7
β Drop-Inπ Reference alternative (not in catalog)
NDS356AP
β Drop-Inπ Reference alternative (not in catalog)
SI2305DS-T1-E3
β Drop-Inπ Reference alternative (not in catalog)
BSS84PH6327XTSA2 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSS84PH6327XTSA2 |
| FET Type | P-Channel |
| Drain-to-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) | -170 mA (Ta) |
| Power Dissipation (PD) | 360 mW (Ta) |
| On-State Resistance (RDS(on)) max | 8 ohm at VGS = -10 V |
| Gate-to-Source Voltage (VGS) | +/-20 V |
| Package | PG-SOT23 (SOT-23-3) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55C to +150C |
| Qualification | AEC-Q101 (Automotive) |
| Technology Family | SIPMOS OptiMOS |
| Polarity | P-Channel Enhancement Mode |
| RoHS Status | Compliant |
| Lead-Free | Yes |
BSS84PH6327XTSA2 Pin Configuration
| Pin 1 | GATE β Gate control input; drive to ground to turn on the P-channel |
| Pin 2 | SOURCE β Source terminal; connect to the positive rail (e.g., +12 V or +5 V) |
| Pin 3 | DRAIN β Drain terminal; connect to the load |
Safe Operating Area (BSS84P family typical)
Typical Applications
BSS84PH6327XTSA2 is suitable for 6 applications: Automotive High-Side Load Switch, USB VBUS Power Distribution Switch, Battery Polarity / Reverse Protection, Signal-Level Shifting (3.3V to 12V), Relay and Solenoid Driver Stage, IoT Sensor Power Gating.
Automotive High-Side Load Switch
The BSS84PH6327XTSA2 is well suited as a high-side load switch in 12 V automotive body-control modules because its -60 V VDS comfortably covers the 12 V nominal rail plus inductive transients, while its logic-level gate threshold allows direct drive from 3.3 V or 5 V microcontrollers. AEC-Q101 qualification ensures it survives the thermal and vibration stresses of under-hood and cabin-mounted modules. Using a 100 kohm gate pull-up keeps the load off during MCU reset; the source sits at the +12 V rail and the load at the drain.
Recommended
USB VBUS Power Distribution Switch
In USB Type-A downstream-facing ports, the BSS84PH6327XTSA2 provides a 5 V high-side switch that turns on when the host controller pulls its GPIO low. Its low RDS(on) of 8 ohm at VGS = -10 V keeps voltage drop under 100 mV at 170 mA continuous load, and the small SOT-23 footprint preserves PCB area inside USB-A connectors. The P-channel topology eliminates the need for a boost circuit that an N-channel solution would require to drive the gate above 5 V VBUS.
Recommended
Battery Polarity / Reverse Protection
For reverse-polarity protection in single-cell Li-ion or 12 V lead-acid systems, the BSS84PH6327XTSA2 is wired with source at the battery positive and drain at the load. During normal operation the gate is tied to ground through a resistor, fully turning on the P-channel and presenting only 8 ohm of series resistance. If the battery is reversed, the body diode and channel block current flow, protecting downstream circuitry. The -60 V rating provides margin against load-dump transients in automotive environments.
Recommended
Signal-Level Shifting (3.3V to 12V)
The BSS84PH6327XTSA2 implements level translation from 3.3 V microcontroller GPIO to 5 V or 12 V logic domains. Configure it as a pull-down switch on the high-side rail: the MCU GPIO drives the gate to ground to connect the high-side pull-up to the output node, and releases the gate to a pull-up resistor to release the node. Because the gate threshold is logic-level, the same circuit works for 1.8 V, 3.3 V, and 5 V MCUs without level-shifter ICs.
Recommended
Relay and Solenoid Driver Stage
Although the BSS84PH6327XTSA2's 170 mA continuous current is below most relay coil ratings, it serves as a pre-driver stage that gates an external N-channel power MOSFET controlling the coil. The P-channel high-side position lets the MCU keep the power stage off during reset. Inductive flyback protection requires an external TVS or freewheeling diode across the coil since the small-signal MOSFET's avalanche rating is not intended for repetitive inductive switching.
Recommended
IoT Sensor Power Gating
Battery-powered IoT sensor nodes use the BSS84PH6327XTSA2 to gate power to sensors, radios, or sub-circuits that draw up to 170 mA. The P-channel high-side switch lets the microcontroller keep the load fully disconnected in deep-sleep, drawing only the MOSFET's gate leakage current. Its 360 mW power dissipation and SOT-23 footprint suit compact designs such as wearables and wireless sensor tags, and AEC-Q101 qualification provides headroom for industrial IoT deployments.
Recommended
Recommended Products Summary
Engineering reference data for BSS84PH6327XTSA2 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSS84P H6327 | BSS84P L6327 | BSS84PH6327XTSA1 | DMG2305UX-7 | NDS356AP | SI2305DS-T1-E3 |
|---|---|---|---|---|---|---|---|
| Package | SOT-23 (PG-SOT23) | SOT-23 (PG-SOT23) - same | SOT-23 (PG-SOT23) - same | SOT-23 (PG-SOT23) - same | SOT-23 - same | SOT-23 - same | SOT-23 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Diodes Incorporated | onsemi | Vishay |
| Drain-to-Source Voltage (VDS) | -60 V | -60 V | -60 V | -60 V | -20 V | -30 V | -8 V |
| Continuous Drain Current (ID) | -170 mA | -170 mA | -170 mA | -170 mA | -3.8 A pulsed / -2.6 A continuous | -1.1 A | -3.5 A pulsed / -1.4 A continuous |
| RDS(on) max | 8 ohm at VGS=-10V | 8 ohm at VGS=-10V | 8 ohm at VGS=-10V | 8 ohm at VGS=-10V | 65 mohm at VGS=-4.5V | 300 mohm at VGS=-4.5V | 65 mohm at VGS=-4.5V |
| Power Dissipation (PD) | 360 mW | 360 mW | 360 mW | 360 mW | 1.4 W | 500 mW | 1.25 W |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes | No (commercial grade) |
| Operating Temperature | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C | -55C to +150C |
Key Differentiators
- AEC-Q101 automotive qualification with -60 V VDS (vs NDS356AP (onsemi))
- Logic-level gate drive from 1.8V-5V MCUs (vs DMG2305UX-7 (Diodes Incorporated))
- Same SOT-23 pinout as Infineon BSS84P family variants (vs BSS84P H6327 / L6327 / XTSA1)
Design Notes
At maximum continuous drain current of 170 mA and worst-case VIN-VOUT drop, the BSS84PH6327XTSA2 dissipates approximately 140 mW, which is well within the 360 mW SOT-23 rating on a standard 1 oz 2-layer FR4 board. Estimated: PD = ID^2 x RDS(on) = (0.17 A)^2 x 5 ohm (typical RDS(on)) = 0.14 W. For continuous operation above 100 mA in enclosed or high-ambient-temperature environments, add copper pours or thermal vias to the source pad to keep the junction below 150C. If driving pulsed loads, use the single-pulse thermal impedance curves in the BSS84P datasheet.
Do not exceed the +/-20 V gate-to-source absolute maximum rating. During turn-off transients on inductive loads, the drain can swing above the source; if this swing is not clamped, the gate will see the same transient. Add a 10 kohm to 100 kohm gate-to-source resistor to prevent floating-gate turn-on. For automotive 12 V systems, also confirm peak transient voltages stay below -60 V VDS during load-dump events, or add a TVS diode across drain-source.
Lay out the source pad as the largest copper pour, since the source lead provides the primary thermal path to ambient. Keep the gate trace short and routed away from the drain-switching node to minimize dv/dt-induced gate bounce. Place a 100 kohm gate pull-up resistor close to the gate pin to ensure the MOSFET stays off if the driving GPIO enters high-impedance during MCU reset or boot. The SOT-23 footprint is industry-standard and accepts all BSS84-family cross-brand substitutes without board changes.
Compliance Information
AEC-Q101 (automotive) qualified per Infineon BSS84P product page; RoHS and REACH compliant per distributor listings. Halogen-free status not explicitly stated in provided data. Note the MPN itself is AEC-Q101 qualified (discrete component standard), not AEC-Q100 (IC standard), so aec_q100 is set to not_applicable.
