BSS84PH6327XTSA2 vs BSS83PH6327XTSA1 Comparison
Detailed side-by-side comparison of BSS84PH6327XTSA2 by Infineon and BSS83PH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSS84PH6327XTSA2 | BSS83PH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.10 | $0.11 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSS84PH6327XTSA2 | β |
| FET Type | P-Channel | P-Channel |
| Drain-to-Source Voltage (VDS) | -60 V | β |
| Continuous Drain Current (ID) | -170 mA (Ta) | β |
| Power Dissipation (PD) | 360 mW (Ta) | β |
| On-State Resistance (RDS(on)) max | 8 ohm at VGS = -10 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | β |
| Gate-to-Source Voltage (VGS) | +/-20 V | β |
| Package | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C | β |
| Qualification | AEC-Q101 (Automotive) | Automotive grade per Infineon |
| Technology Family | SIPMOS OptiMOS | β |
| Polarity | P-Channel Enhancement Mode | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Technology | β | MOSFET (Metal-Oxide Semiconductor) |
| Drain-Source Voltage (VDS) | β | -60 V |
| Continuous Drain Current (ID) at TA=25C | β | 330 mA |
| Pulsed Drain Current (IDM) | β | 1.3 A |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | β | 2.0 ohm (max) |
| Gate-Source Threshold Voltage (VGS(th)) | β | -1 V to -2.5 V (typ) |
| Gate-Source Voltage (VGS) max | β | +/- 20 V |
| Power Dissipation (PD) at TA=25C | β | 360 mW |
| Operating Junction Temperature | β | -55 C to +150 C |
| Process Technology | β | SIPMOS / OptiMOS |