BSZ011NE2LS5IATMA1 vs BSC015NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of BSZ011NE2LS5IATMA1 by Infineon and BSC015NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ011NE2LS5IATMA1
BSZ011NE2LS5IATMA1 - 25V 1.1mΞ© OptiMOS 5 N-MOSFET | Infineon
BSZ011NE2LS5IATMA1 β ActiveInfineon
BSC015NE2LS5IATMA1
BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon
BSC015NE2LS5IATMA1 β ActiveSpecification Comparison
| Parameter | BSZ011NE2LS5IATMA1 | BSC015NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.69 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 trench |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 35 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 40 A | β |
| On-State Resistance RDS(on) max at VGS=10 V | 1.1 mΞ© (typical, per datasheet title) | β |
| Power Dissipation at TA=25Β°C | 2.1 W | β |
| Power Dissipation at TC=25Β°C | 69 W | β |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (typical 1.5 V) | β |
| Gate Drive Voltage (recommended) | 4.5 V to 10 V | β |
| Operating Temperature Range | -55Β°C to +150Β°C | -55C to +150C (junction) |
| Package | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) | PG-TDSON-8-6 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 25V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 25 V |
| Continuous Drain Current (ID) at Ta | β | 33 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| On-Resistance RDS(on) Max at VGS=10V | β | 1.5 mOhm |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 50 W |
| Pin Count | β | 8 |
| Gate Threshold Voltage VGS(th) Typ | β | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg Typ | β | [DATA_NEEDED: Qg typical value] |