BSZ018NE2LSIATMA1 vs BSC015NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of BSZ018NE2LSIATMA1 by Infineon and BSC015NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon
BSZ018NE2LSIATMA1 β ActiveInfineon
BSC015NE2LS5IATMA1
BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon
BSC015NE2LS5IATMA1 β ActiveSpecification Comparison
| Parameter | BSZ018NE2LSIATMA1 | BSC015NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.39 | $0.69 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ018NE2LSIATMA1 | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (ID) at Ta=25C | 22 A | β |
| Continuous Drain Current (ID) at Tc=25C | 40 A | β |
| Pulsed Drain Current (IDM) | 160 A | β |
| Typical On-Resistance RDS(on) at VGS=10V | 1.8 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Power Dissipation at Ta=25C | 2.1 W | β |
| Power Dissipation at Tc=25C | 69 W | β |
| Operating Temperature Range | -55 C to +150 C | -55C to +150C (junction) |
| Package | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TDSON-8-6 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS (Infineon trench MOSFET) | OptiMOS 5 trench |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Product Family | β | OptiMOS 5 25V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 25 V |
| Continuous Drain Current (ID) at Ta | β | 33 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| On-Resistance RDS(on) Max at VGS=10V | β | 1.5 mOhm |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 50 W |
| Pin Count | β | 8 |
| Gate Threshold Voltage VGS(th) Typ | β | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg Typ | β | [DATA_NEEDED: Qg typical value] |
| MSL Level | β | 1 (per JEDEC J-STD-020) |