BSZ036NE2LSATMA1 vs BSO150N03MDGXUMA1 Comparison

Detailed side-by-side comparison of BSZ036NE2LSATMA1 by Infineon and BSO150N03MDGXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ036NE2LSATMA1

BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon

BSZ036NE2LSATMA1 βœ“ Active

Specification Comparison

Parameter BSZ036NE2LSATMA1 BSO150N03MDGXUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.37
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 25V β€”
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 25 V β€”
Continuous Drain Current (ID) at TA=25C 16 A β€”
Continuous Drain Current (ID) at TC=25C 40 A β€”
Power Dissipation (PD) at TA=25C 2.1 W β€”
Power Dissipation (PD) at TC=25C 37 W β€”
Package PG-TSDSON-8-FL (5x6 mm) PG-DSO-8 (SO-8 with exposed pad)
Mounting Type Surface Mount Surface Mount
Configuration Single β€”
Operating Temperature Range -55C to +150C -55C to +150C
MSL Level 1 (Unlimited) 1 (unlimited)
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Gate Drive Logic-level compatible β€”
Part Number β€” BSO150N03MDGXUMA1
Product Type β€” Dual N-Channel MOSFET Array
Technology β€” OptiMOS 3M (30V trench MOSFET)
Drain-Source Voltage (VDS) max β€” 30 V
Continuous Drain Current (ID) max per channel β€” 9.3 A
On-State Resistance (RDS(on)) max β€” 15 mOhm at VGS=10V
Gate-Source Voltage (VGS) max β€” 20 V
Gate Threshold Voltage (VGS(th)) typ β€” 1.0 V
Power Dissipation (PD) max β€” 1.4 W
Channel Configuration β€” Dual N-Channel (independent)

Datasheets & Resources

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