BSZ0501NSIATMA1 vs BSC028N06NSTATMA1 Comparison
Detailed side-by-side comparison of BSZ0501NSIATMA1 by Infineon and BSC028N06NSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ0501NSIATMA1
BSZ0501NSIATMA1 - 30V 40A OptiMOS 5 N-Channel MOSFET | Infineon
BSZ0501NSIATMA1 β ActiveInfineon
BSC028N06NSTATMA1
BSC028N06NSTATMA1 - 60V 2.8mΞ© N-Ch OptiMOS 5 MOSFET | Infineon
BSC028N06NSTATMA1 β ActiveSpecification Comparison
| Parameter | BSZ0501NSIATMA1 | BSC028N06NSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.29 | $0.40 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0501NSIATMA1 | β |
| Product Family | OptiMOS 5 (25V/30V) | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (Vds) | 30 V | β |
| Continuous Drain Current (Id) at TA=25C | 25 A | β |
| Continuous Drain Current (Id) at TC=25C | 40 A | β |
| Power Dissipation (Pd) at TA=25C | 2.1 W | β |
| Power Dissipation (Pd) at TC=25C | 50 W | β |
| Operating Mode | Enhancement Mode | β |
| Configuration | Single with built-in diode | β |
| Package | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TDSON-8-7 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Terminals | 8 | β |
| JESD-609 Code | e3 (matte tin) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) value] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| Operating Temperature Range | [DATA_NEEDED: Tj max] | β |
| RoHS Status | Compliant | Compliant |
| Series | β | OptiMOS 5 |
| Part Number Base | β | BSC028N06NS |
| Technology | β | MOSFET N-Channel (OptiMOS 5) |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 24 A |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| On-Resistance RDS(on) max at VGS=10V | β | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 2.5 V to 3.5 V |
| Total Gate Charge Qg | β | 37 nC @ VGS=10V |
| Input Capacitance Ciss | β | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] |
| Output Capacitance Coss | β | 825 pF |
| Reverse Transfer Capacitance Crss | β | 56 pF |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 100 W |
| Operating Junction Temperature | β | -55C to +175C |
| Halogen-Free | β | Yes |
| AEC-Q101 Automotive Qualified | β | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] |