BSZ0501NSIATMA1 vs BSZ0901NSIATMA1 Comparison
Detailed side-by-side comparison of BSZ0501NSIATMA1 by Infineon and BSZ0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ0501NSIATMA1
BSZ0501NSIATMA1 - 30V 40A OptiMOS 5 N-Channel MOSFET | Infineon
BSZ0501NSIATMA1 β Active
Specification Comparison
| Parameter | BSZ0501NSIATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.29 | $0.34 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0501NSIATMA1 | BSZ0901NSIATMA1 |
| Product Family | OptiMOS 5 (25V/30V) | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vds) | 30 V | β |
| Continuous Drain Current (Id) at TA=25C | 25 A | β |
| Continuous Drain Current (Id) at TC=25C | 40 A | β |
| Power Dissipation (Pd) at TA=25C | 2.1 W | β |
| Power Dissipation (Pd) at TC=25C | 50 W | β |
| Operating Mode | Enhancement Mode | β |
| Configuration | Single with built-in diode | β |
| Package | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Terminals | 8 | β |
| JESD-609 Code | e3 (matte tin) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) value] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: total gate charge Qg] |
| Operating Temperature Range | [DATA_NEEDED: Tj max] | -55 C to +150 C (typical MOSFET range) |
| RoHS Status | Compliant | Compliant |
| Series | β | OptiMOS 25V |
| Technology | β | OptiMOS trench N-channel MOSFET |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta=25C | β | 25 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Power Dissipation (PD) at Ta=25C | β | 2.1 W |
| Power Dissipation (PD) at Tc=25C | β | 69 W |
| Pin Count | β | 8 |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Packaging | β | Tape & Reel (ATMA1 suffix = 13-inch reel) |