BSZ060NE2LSATMA1 vs BSC021N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSZ060NE2LSATMA1 by Infineon and BSC021N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ060NE2LSATMA1
BSZ060NE2LSATMA1 - 25V 44A OptiMOS N-Channel MOSFET | Infineon
BSZ060NE2LSATMA1 β Active
Specification Comparison
| Parameter | BSZ060NE2LSATMA1 | BSC021N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.27 | $0.81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ060NE2LSATMA1 | BSC021N08NS5ATMA1 |
| Technology | OptiMOSβ’ (N-Channel Trench MOSFET) | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) | 25 V | β |
| Continuous Drain Current (ID) @ Ta=25C | 12 A | β |
| Continuous Drain Current (ID) @ Tc=25C | 44 A | β |
| Pulsed Drain Current (IDM) | 44 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 6 mOhm | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ VGS=4.5V] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Power Dissipation (Ta) | 2.1 W | β |
| Power Dissipation (Tc) | 26 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | SuperSO8 5x6 (PG-TSON-8-3) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant (Pb-free) |
| MSL Level | 1 | MSL 1 (per JEDEC J-STD-020) |
| Shipping Packaging | Tape & Reel | β |
| Drain-Source Voltage (V_DS max) | β | 80 V |
| Continuous Drain Current (I_D, Tc=25Β°C) | β | 226 A |
| Continuous Drain Current (I_D, Tc=100Β°C) | β | 100 A |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max (V_GS=10 V) | β | 2.1 mΞ© |
| Gate-Source Voltage V_GS max | β | Β±20 V |
| Power Dissipation P_D (Tc=25Β°C) | β | 214 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Total Gate Charge Q_G typ | β | [DATA_NEEDED: total gate charge] |
| R_thJC thermal resistance max | β | [DATA_NEEDED: R_thJC] |
| Avalanche Energy Rated | β | Yes (single-pulse) |
| Delivery Form | β | Tape & Reel (T&R) |