BSZ060NE2LSATMA1 vs BSC039N06NSATMA1 Comparison
Detailed side-by-side comparison of BSZ060NE2LSATMA1 by Infineon and BSC039N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ060NE2LSATMA1
BSZ060NE2LSATMA1 - 25V 44A OptiMOS N-Channel MOSFET | Infineon
BSZ060NE2LSATMA1 β ActiveInfineon
BSC039N06NSATMA1
BSC039N06NSATMA1 - 60V 3.9mΞ© 100A OptiMOS 5 N-MOSFET | Infineon
BSC039N06NSATMA1 β ActiveSpecification Comparison
| Parameter | BSZ060NE2LSATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.27 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ060NE2LSATMA1 | β |
| Technology | OptiMOSβ’ (N-Channel Trench MOSFET) | OptiMOS 5 (TrenchFET-style) |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (ID) @ Ta=25C | 12 A | β |
| Continuous Drain Current (ID) @ Tc=25C | 44 A | β |
| Pulsed Drain Current (IDM) | 44 A | [DATA_NEEDED: IDM pulsed value at TC] |
| On-Resistance RDS(on) max @ VGS=10V | 6 mOhm | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ VGS=4.5V] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Power Dissipation (Ta) | 2.1 W | β |
| Power Dissipation (Tc) | 26 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Shipping Packaging | Tape & Reel | β |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | β | 19 A |
| Continuous Drain Current (ID) at TC | β | 100 A |
| On-Resistance RDS(on) max at VGS=10V | β | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | β | 2.5 W |
| Power Dissipation at TC (PD) | β | 69 W |
| Operating Junction Temperature | β | -55C to +150C |
| Number of Pins | β | 8 |
| Gate Drive Voltage (VGS) | β | Β±20 V max |