BSZ060NE2LSATMA1 vs IAUZ30N06S5L140ATMA1 Comparison
Detailed side-by-side comparison of BSZ060NE2LSATMA1 by Infineon and IAUZ30N06S5L140ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ060NE2LSATMA1
BSZ060NE2LSATMA1 - 25V 44A OptiMOS N-Channel MOSFET | Infineon
BSZ060NE2LSATMA1 β ActiveInfineon
IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon
IAUZ30N06S5L140ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ060NE2LSATMA1 | IAUZ30N06S5L140ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.27 | $0.96 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSZ060NE2LSATMA1 | β |
| Technology | OptiMOSβ’ (N-Channel Trench MOSFET) | β |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (ID) @ Ta=25C | 12 A | β |
| Continuous Drain Current (ID) @ Tc=25C | 44 A | β |
| Pulsed Drain Current (IDM) | 44 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 6 mOhm | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ VGS=4.5V] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Power Dissipation (Ta) | 2.1 W | β |
| Power Dissipation (Tc) | 26 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-32 (S3O8, 3x3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | β |
| MSL Level | 1 | β |
| Shipping Packaging | Tape & Reel | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID, Tc) | β | 30 A (Tj) |
| Power Dissipation (PD, Tc) | β | 33 W |
| RDS(on) Max @ VGS=10 V | β | 14 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 2.2 V (typ) |
| Total Gate Charge (Qg) | β | 12.2 nC @ VGS=10 V |
| Output Capacitance (Coss) | β | 888 pF @ VDS=30 V |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Technology Family | β | OptiMOS 5 |
| Automotive Grade | β | AEC-Q101 qualified |
| Gate-Source Voltage Max | β | Β±20 V |
| Lead-Free / RoHS | β | Yes (RoHS compliant) |