IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon
MPN: IAUZ30N06S5L140ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.76 | $1.76 |
| 10 | $1.58 | $15.80 |
| 100 | $1.34 | $134.00 |
| 500 | $1.12 | $560.00 |
| 1,000 | $0.96 | $960.00 |
IAUZ30N06S5L140ATMA1 Overview
What is an OptiMOS 5 MOSFET? OptiMOS is Infineon's trench power-MOSFET platform, and the OptiMOS 5 generation represents the fifth major step in that platform, optimized for synchronous rectification in switch-mode power supplies (SMPS), DC-DC converters, and motor control. The 60 V OptiMOS 5 family targets applications such as LED lighting drivers, ADAS power trees, USB-PD, and 48 V mild-hybrid subsystems, where low RDS(on) and low switching loss directly translate into cooler running parts and higher system efficiency. The MOSFET sits in the broader taxonomy: power MOSFET -> discrete semiconductor -> semiconductor, and as an N-channel enhancement-mode device it requires a positive gate drive to turn on.
Key differentiating specifications include a 14 mΩ maximum RDS(on) at VGS=10 V, a total gate charge (Qg) of 12.2 nC at VGS=10 V, and a typical output capacitance (Coss) of 888 pF at VDS=30 V. The PG-TSDSON-8-32 footprint occupies only 3x3 mm of board area and uses a leadless S3O8 package with an exposed drain pad that provides both low thermal resistance and a low-source-inductance connection. Together these attributes minimize both conduction and switching losses, which is the central design goal of the OptiMOS 5 family.
The internal architecture uses a deep-trench cell design that increases channel density per unit area while lowering the specific on-resistance (RDS(on)*Area). The result is a part that achieves 14 mΩ in a much smaller footprint than planar MOSFETs of comparable rating, and that can be driven with standard logic-level gate signals thanks to a typical VGS(th) in the 2.2 V neighborhood. The automotive-grade qualification (AEC-Q101) means the part is validated for harsh thermal and humidity stress typical of under-the-hood automotive environments.
Typical applications include synchronous-rectification stages in 48 V-to-12 V DC-DC converters, high-side and low-side switches in motor-driver H-bridges, USB-PD and battery-management power-path FETs, and hot-swap controllers in 12 V/24 V industrial buses. The 60 V drain rating gives substantial margin for 24 V industrial rails and for the ringing seen on 12 V automotive load-dump transients.
When designing with this part, place the gate-drive loop area as small as possible to minimize ringing, use a 10 Ω gate resistor to control dV/dt, and exploit the bottom-source/PCB-drain connection to spread heat through copper pours. Make sure VGS never exceeds the ±20 V absolute maximum, and prefer a 10 V drive when full RDS(on) performance is required.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond what the manufacturer datasheet provides in isolation.
Drop-in alternatives for IAUZ30N06S5L140ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUZ30N06S5L140ATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUC120N06S5L032ATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →BSC039N06NSATMA1
✅ Drop-In✓ In Stock
$0.46 / Unit
View Datasheet →IPT007N06NATMA1
✅ Drop-In✓ In Stock
$2.84 / Unit
View Datasheet →BSC014N06NSATMA1
✅ Drop-In✓ In Stock
$0.89 / Unit
View Datasheet →BSZ060NE2LSATMA1
✅ Drop-In✓ In Stock
$0.27 / Unit
View Datasheet →IPD090N03LGATMA1
✅ Drop-In✓ In Stock
$0.34 / Unit
View Datasheet →IAUZ30N06S5L140ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Tc) | 30 A (Tj) |
| Power Dissipation (PD, Tc) | 33 W |
| RDS(on) Max @ VGS=10 V | 14 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.2 V (typ) |
| Total Gate Charge (Qg) | 12.2 nC @ VGS=10 V |
| Output Capacitance (Coss) | 888 pF @ VDS=30 V |
| Package | PG-TSDSON-8-32 (S3O8, 3x3 mm) |
| Mounting Type | Surface Mount |
| Operating Junction Temperature | -55°C to +175°C |
| Technology Family | OptiMOS 5 |
| Automotive Grade | AEC-Q101 qualified |
| Gate-Source Voltage Max | ±20 V |
| Lead-Free / RoHS | Yes (RoHS compliant) |
IAUZ30N06S5L140ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (pin 1) |
| Pin 2 | Source — Source connection (pin 2) |
| Pin 3 | Source — Source connection (pin 3) |
| Pin 4 | Source — Source connection (pin 4) |
| Pin 5 | Source — Source connection (pin 5) |
| Pin 6 | Source — Source connection (pin 6) |
| Pin 7 | Source — Source connection (pin 7) |
| Pin 8 | Gate — Gate drive input |
| Pin EP | Drain (Exposed Pad) — Drain and thermal pad on package bottom |
Typical Applications
IAUZ30N06S5L140ATMA1 is suitable for 6 applications: 48V-to-12V DC-DC Synchronous Rectification, Automotive LED Lighting Drivers, ADAS Sensor Power Path Protection, USB-PD Power Path Switch, Brushless DC Motor Drive H-Bridge, Hot-Swap and OR-ing Controllers.
48V-to-12V DC-DC Synchronous Rectification
The IAUZ30N06S5L140ATMA1's 60 V VDS rating and 14 mΩ RDS(on) at VGS=10 V make it a strong fit for secondary-side synchronous rectification in 48 V-to-12 V DC-DC converters. With a total gate charge of 12.2 nC and Coss of 888 pF, the device switches efficiently at 200-500 kHz typical buck frequencies, minimizing switching losses and contributing to >95% converter efficiency. The PG-TSDSON-8-32 (3x3 mm) footprint allows high power density designs in compact server and telecom DC-DC bricks. Unlike older planar MOSFETs, the OptiMOS 5 trench technology reduces both conduction and switching losses simultaneously, which directly improves thermal headroom. Designers should place the gate-drive loop as small as possible and add a 10 Ω gate resistor to control ringing.
Recommended
Automotive LED Lighting Drivers
The IAUZ30N06S5L140ATMA1 is AEC-Q101 qualified, making it ideal for automotive LED headlamp and daytime-running-light driver stages. Its 14 mΩ RDS(on) reduces I²R losses in the high-current LED string drive path, while the -55°C to +175°C Tj range handles under-the-hood thermal stress. The 60 V VDS rating provides comfortable margin for 12 V battery load-dump transients up to 35 V, eliminating the need for additional TVS protection in the switch path. The small PG-TSDSON-8-32 footprint allows driver electronics to be co-located inside tight lamp housings. Per Infineon's OptiMOS 5 family datasheet, the part's optimized QGD minimizes dead-time losses in totem-pole LED driver topologies. Recommended companion is a high-side gate driver with automotive transient immunity.
Recommended
ADAS Sensor Power Path Protection
Advanced Driver Assistance Systems (ADAS) sensors - radar, lidar, and camera modules - need clean, protected power paths from the 12 V automotive bus. The IAUZ30N06S5L140ATMA1 serves as the high-side protection FET or hot-swap switch, where its 14 mΩ RDS(on) minimizes voltage drop and its 60 V VDS rating withstands load-dump surges. AEC-Q101 qualification is mandatory for under-hood and bumper-mounted modules exposed to wide temperature swings. The 12.2 nC Qg allows the gate to be driven quickly by a low-power automotive gate driver, reducing controller I/O current. Compared to standard MOSFETs, the OptiMOS 5 family offers lower Figure-of-Merit, reducing both steady-state and transient power dissipation in safety-critical sensor modules.
Recommended
USB-PD Power Path Switch
USB Power Delivery (USB-PD) and Type-C charging systems require high-current, low-loss power-path FETs to switch 5 V/9 V/15 V/20 V rails. The IAUZ30N06S5L140ATMA1 with its 60 V VDS, 14 mΩ RDS(on), and small 3x3 mm footprint is ideal for the high-side switch in USB-PD source applications. Its fast switching and low Qg support the high-frequency operation demanded by modern USB-PD controllers. The OptiMOS 5 technology reduces package temperature rise during 5 A continuous charging, eliminating the need for external heatsinking. The PG-TSDSON-8-32 footprint is compatible with high-density mobile power PCB layouts.
Recommended
Brushless DC Motor Drive H-Bridge
The IAUZ30N06S5L140ATMA1's 30 A continuous rating and 14 mΩ RDS(on) make it well suited as the low-side switch in 12 V/24 V brushless DC (BLDC) motor drive H-bridges used in HVAC blowers, water pumps, and cooling fans. Its low RDS(on) reduces conduction losses at high motor currents, while its low Qg enables high PWM frequencies (up to 50 kHz) for silent motor operation. The 60 V VDS rating tolerates the back-EMF spikes generated by motor winding inductance during PWM transitions. Per the OptiMOS 5 datasheet, the part's low QGD improves shoot-through immunity in dead-time-critical half-bridge topologies. The automotive grade qualification supports direct use in vehicle motor-control applications.
Recommended
Hot-Swap and OR-ing Controllers
The IAUZ30N06S5L140ATMA1 is well suited for 12 V/24 V hot-swap controllers and OR-ing FETs in server, telecom, and industrial power systems. Its 60 V VDS rating provides margin for transient overvoltages on the bus, while its 14 mΩ RDS(on) minimizes the steady-state voltage drop and power dissipation when the FET is fully enhanced. The PG-TSDSON-8-32 footprint allows dense layouts on multi-channel hot-swap boards, and its AEC-Q101 qualification allows deployment in both industrial and automotive environments. With Qg of 12.2 nC, the gate can be driven by standard hot-swap controllers without external gate-drive buffers. The OptiMOS 5 family SOA enables reliable inrush current limiting during plug-in events.
Recommended
Recommended Products Summary
Engineering reference data for IAUZ30N06S5L140ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC120N06S5L032ATMA1 | BSC039N06NSATMA1 | IPT007N06NATMA1 | BSC014N06NSATMA1 | BSZ060NE2LSATMA1 | IPD090N03LGATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8-32 (3x3 mm) | PG-TSDSON-8-32 - same | PG-TSDSON-8-32 - same | PG-TSDSON-8-32 - same | PG-TSDSON-8-32 - same | PG-TSDSON-8-32 - same | PG-TSDSON-8-32 - same |
| VDS Max | 60 V | 60 V | 60 V | 60 V | 60 V | 25 V | 30 V |
| RDS(on) Max @ VGS=10V | 14 mΩ | 3.2 mΩ | 3.9 mΩ | 0.7 mΩ | 1.4 mΩ | 6 mΩ | 9 mΩ |
| Continuous Drain Current (Tc) | 30 A | 120 A | 100 A (typ) | 300 A (typ) | 180 A (typ) | 60 A (typ) | 50 A (typ) |
| Technology Family | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Operating Junction Temperature | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C |
Key Differentiators
- Compact 3x3 mm PG-TSDSON-8-32 footprint with 14 mΩ RDS(on) (vs BSC039N06NSATMA1)
- OptiMOS 5 60 V family compatibility with broader portfolio (vs IPD090N03LGATMA1)
- AEC-Q101 automotive qualification in small outline (vs BSZ060NE2LSATMA1)
Design Notes
Estimated: At ID=15 A and RDS(on)=14 mΩ, conduction loss is ~3.15 W. The PG-TSDSON-8-32 (3x3 mm) package has a typical theta_JA of ~50 C/W on a 1 oz copper 1 square inch pour, yielding ~158°C junction rise over ambient. A 4-layer PCB with thermal vias directly under the exposed drain pad is strongly recommended. For continuous 30 A operation, derate to 15-20 A or use a substantially larger copper pour / forced-air cooling. Verify SOA against the datasheet graph at the worst-case VDS and pulse duration.
Minimize the gate-drive loop by placing the gate-driver IC within 5 mm of the MOSFET gate pin. Use a 10 Ω gate-source resistor to control dV/dt and prevent parasitic ringing; for high-frequency (>300 kHz) switching, lower this to 4.7 Ω. Keep the gate trace away from the drain switching node to avoid Miller coupling. The bottom-exposed drain pad must be soldered to a sufficiently large copper pour with multiple thermal vias (≥9 vias of 0.3 mm diameter) for proper heat extraction.
Do not exceed ±20 V on the gate-source pin; if the gate driver can produce ringing above 20 V during turn-off, add a 5.1 V Zener clamp from gate to source. Avoid driving the gate with voltages below VGS(th) (typ 2.2 V) at full load - the part will operate in the linear region and overheat. When used as a hot-swap FET, ensure the inrush current and SOA stay within the datasheet's pulsed-rating curve. Always confirm the absolute maximum VDS (60 V) against any inductive ringing spikes with proper snubber design.
Compliance Information
AEC-Q101 (automotive) qualified per Infineon OptiMOS 5 family datasheet. Note: AEC-Q101 (not AEC-Q100) is the discrete semiconductor automotive standard; classified here as qualified for automotive use. RoHS and lead-free compliant per distributor listings.
