BSZ068N06NSATMA1 vs IPB110P06LMATMA1 Comparison
Detailed side-by-side comparison of BSZ068N06NSATMA1 by Infineon and IPB110P06LMATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ068N06NSATMA1
BSZ068N06NSATMA1 - 60V, 6.8mΞ© N-Channel OptiMOS 5 MOSFET | Infineon
BSZ068N06NSATMA1 β Active
Specification Comparison
| Parameter | BSZ068N06NSATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $1.31 |
| FET Type | N-Channel | P-Channel |
| Technology | OptiMOS 5 (trench-gate) | OptiMOS (trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | -60 V |
| Continuous Drain Current (ID, Tc) | 40 A | β |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID at Ta] | β |
| On-Resistance RDS(on) max | 6.8 mΞ© @ VGS=10 V | β |
| Power Dissipation (Ta) | 2.1 W | β |
| Power Dissipation (Tc) | 46 W | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55 C to +175 C (TJ) |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 | β |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | β |
| Continuous Drain Current (ID) at TC=25C | β | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | β | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | β | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | β | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | β | +/-20 V |
| Package / Case | β | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | β | PG-TO263-3-2 |
| Gate Drive Level | β | Logic-level compatible |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |