BSZ068N06NSATMA1 vs IQDH35N03LM5SCATMA1 Comparison
Detailed side-by-side comparison of BSZ068N06NSATMA1 by Infineon and IQDH35N03LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ068N06NSATMA1
BSZ068N06NSATMA1 - 60V, 6.8mΞ© N-Channel OptiMOS 5 MOSFET | Infineon
BSZ068N06NSATMA1 β ActiveInfineon
IQDH35N03LM5SCATMA1
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 β ActiveSpecification Comparison
| Parameter | BSZ068N06NSATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $2.05 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench-gate) | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID, Tc) | 40 A | β |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID at Ta] | β |
| On-Resistance RDS(on) max | 6.8 mΞ© @ VGS=10 V | β |
| Power Dissipation (Ta) | 2.1 W | β |
| Power Dissipation (Tc) | 46 W | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55 C to +175 C |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 | 1 (unlimited) |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | β |
| Manufacturer | β | Infineon Technologies |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at Ta | β | 66 A |
| Pulsed Drain Current (IDM) at Tc | β | 700 A |
| On-State Resistance (RDS(on)) max | β | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 278 W |
| RoHS Status | β | Compliant |
| Marking | β | IQDH35N03LM5S |