BSZ068N06NSATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of BSZ068N06NSATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ068N06NSATMA1
BSZ068N06NSATMA1 - 60V, 6.8mΞ© N-Channel OptiMOS 5 MOSFET | Infineon
BSZ068N06NSATMA1 β Active
Specification Comparison
| Parameter | BSZ068N06NSATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.62 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench-gate) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID, Tc) | 40 A | β |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID at Ta] | β |
| On-Resistance RDS(on) max | 6.8 mΞ© @ VGS=10 V | β |
| Power Dissipation (Ta) | 2.1 W | β |
| Power Dissipation (Tc) | 46 W | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55 C to +175 C |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 | β |
| RoHS / Halogen-Free | RoHS compliant, halogen-free | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| RoHS Status | β | Compliant |
| MSL (Moisture Sensitivity Level) | β | 1 |