BSZ0901NSIATMA1 vs BSC084P03NS3GATMA1 Comparison
Detailed side-by-side comparison of BSZ0901NSIATMA1 by Infineon and BSC084P03NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon
BSC084P03NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSZ0901NSIATMA1 | BSC084P03NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $0.24 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSZ0901NSIATMA1 | β |
| Series | OptiMOS 25V | β |
| Technology | OptiMOS trench N-channel MOSFET | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | -30 V |
| Continuous Drain Current (ID) at Ta=25C | 25 A | β |
| Continuous Drain Current (ID) at Tc=25C | 40 A | β |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 69 W | β |
| Package | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TDSON-8-5 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | 58 nC @ VGS = -10 V |
| Operating Temperature Range | -55 C to +150 C (typical MOSFET range) | -55C to +150C |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | β |
| RoHS Status | Compliant | Compliant |
| Polarity / Channel Type | β | P-Channel |
| Continuous Drain Current (Ta) | β | 14.9 A |
| Continuous Drain Current (Tc) | β | 78.6 A |
| Rds(on) max @ VGS = -10 V | β | 6.1 mOhm |
| Rds(on) max @ VGS = -2.5 V | β | [DATA_NEEDED: Rds(on) at 2.5V] |
| Gate Threshold Voltage (VGS(th) typ) | β | -1.7 V |
| Input Capacitance (Ciss) | β | 3.19 nF |
| Output Capacitance (Coss) | β | 110 pF |
| Reverse Transfer Capacitance (Crss) | β | 1.52 nF |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 69 W |
| Technology Family | β | OptiMOS P3 |
| MSL Level | β | 1 (unlimited) |