BSZ0901NSIATMA1 vs BSC0921NDIATMA1 Comparison
Detailed side-by-side comparison of BSZ0901NSIATMA1 by Infineon and BSC0921NDIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0921NDIATMA1
BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon
BSC0921NDIATMA1 β ActiveSpecification Comparison
| Parameter | BSZ0901NSIATMA1 | BSC0921NDIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $0.68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0901NSIATMA1 | β |
| Series | OptiMOS 25V | β |
| Technology | OptiMOS trench N-channel MOSFET | OptiMOS 25V (N-channel) |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 25 A | β |
| Continuous Drain Current (ID) at Tc=25C | 40 A | β |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 69 W | β |
| Package | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TISON-8 (8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | β |
| Operating Temperature Range | -55 C to +150 C (typical MOSFET range) | β |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | β |
| RoHS Status | Compliant | Compliant |
| Configuration | β | Dual N-Channel MOSFET Array |
| Continuous Drain Current (ID) | β | 17 A (per channel) |
| Pulsed Drain Current (IDM) | β | 31 A (per channel, package-limited) |
| Total Power Dissipation (PD) | β | 1 W |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |
| Gate Charge (Qg) | β | Ultra-low (OptiMOS 25V family characteristic) |
| Output Charge (Qoss) | β | Ultra-low (OptiMOS 25V family characteristic) |
| Operating Temperature | β | -55C to +150C (junction) |
| MSL Level | β | 1 (per Infineon OptiMOS family) |
| Primary Application | β | Synchronous buck converters, VRMs, POL regulators |