BSZ0901NSIATMA1 vs BSC190N12NS3GATMA1 Comparison
Detailed side-by-side comparison of BSZ0901NSIATMA1 by Infineon and BSC190N12NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC190N12NS3GATMA1
BSC190N12NS3GATMA1 - 120V 44A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N12NS3GATMA1 β ActiveSpecification Comparison
| Parameter | BSZ0901NSIATMA1 | BSC190N12NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $0.89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0901NSIATMA1 | BSC190N12NS3GATMA1 |
| Series | OptiMOS 25V | β |
| Technology | OptiMOS trench N-channel MOSFET | OptiMOS 3 (N-Channel Trench) |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 120 V |
| Continuous Drain Current (ID) at Ta=25C | 25 A | 8.6 A |
| Continuous Drain Current (ID) at Tc=25C | 40 A | β |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 69 W | β |
| Package | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: typical VGS(th)] |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: Qg typ] |
| Operating Temperature Range | -55 C to +150 C (typical MOSFET range) | -55C to +150C |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | β |
| RoHS Status | Compliant | Compliant (JESD-609 Code e3) |
| Continuous Drain Current (ID) at Tc | β | 44 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | β | 19 mOhm |
| Gate-Source Voltage (VGS) max | β | +/- 20 V |
| Power Dissipation (PD) at Tc | β | 69 W |
| Avalanche Rated | β | Yes (UIS-tested) |
| Body Diode | β | Integrated |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Configuration | β | Single with built-in diode |