BSZ0901NSIATMA1 vs BSZ0501NSIATMA1 Comparison
Detailed side-by-side comparison of BSZ0901NSIATMA1 by Infineon and BSZ0501NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ0501NSIATMA1
BSZ0501NSIATMA1 - 30V 40A OptiMOS 5 N-Channel MOSFET | Infineon
BSZ0501NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSZ0901NSIATMA1 | BSZ0501NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $0.29 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ0901NSIATMA1 | BSZ0501NSIATMA1 |
| Series | OptiMOS 25V | β |
| Technology | OptiMOS trench N-channel MOSFET | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta=25C | 25 A | β |
| Continuous Drain Current (ID) at Tc=25C | 40 A | β |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 69 W | β |
| Package | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TSDSON-8-FL (3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: Qg] |
| Operating Temperature Range | -55 C to +150 C (typical MOSFET range) | [DATA_NEEDED: Tj max] |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | β |
| RoHS Status | Compliant | Compliant |
| Product Family | β | OptiMOS 5 (25V/30V) |
| Drain-Source Voltage (Vds) | β | 30 V |
| Continuous Drain Current (Id) at TA=25C | β | 25 A |
| Continuous Drain Current (Id) at TC=25C | β | 40 A |
| Power Dissipation (Pd) at TA=25C | β | 2.1 W |
| Power Dissipation (Pd) at TC=25C | β | 50 W |
| Operating Mode | β | Enhancement Mode |
| Configuration | β | Single with built-in diode |
| Number of Terminals | β | 8 |
| JESD-609 Code | β | e3 (matte tin) |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| Rds(on) at Vgs=10V (typ) | β | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th)] |