BSZ096N10LS5ATMA1 vs BSZ110N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSZ096N10LS5ATMA1 by Infineon and BSZ110N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 β Active
Specification Comparison
| Parameter | BSZ096N10LS5ATMA1 | BSZ110N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $0.44 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | β |
| Polarity | N-Channel | N-Channel |
| Drain-Source Voltage (VDS max) | 100 V | β |
| Gate-Source Voltage (VGS max) | 20 V (typical) | β |
| Continuous Drain Current (ID, TC=25 Β°C) | 40 A | β |
| Maximum Silicon Drain Current (ID max) | 62 A | β |
| Pulse Drain Current (ID,pulse) | 160 A | β |
| On-Resistance RDS(on) max | 9.6 mΞ© at VGS=10 V | 11 mΞ© |
| Total Power Dissipation (Ptot, TC=25 Β°C) | 69 W | β |
| Gate Threshold Voltage VGS(th) | Logic-level (low single-volt range) | β |
| Diode Continuous Forward Current (IS) | 40 A (TC=25 Β°C) | β |
| Diode Forward Voltage (VSD) | 0.85 V typ, 1.2 V max at IF=20 A | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (junction) | [DATA_NEEDED: operating temperature range] |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 5 N-Channel Power MOSFET |
| Gate Drive | Logic-level compatible | β |
| ESD Protection | Yes (gate-integrated) | β |
| RoHS Status | Compliant | Compliant |
| Packaging Code | ATMA1 (tape and reel) | β |
| Part Family | β | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at Tc | β | 40 A |
| Power Dissipation (PD) at Tc | β | 50 W |
| Configuration | β | Single MOSFET |
| Gate Drive Voltage (VGS) | β | [DATA_NEEDED: VGS rating] |
| MSL Level | β | [DATA_NEEDED: MSL level] |