BSZ096N10LS5ATMA1 vs ISC080N10NM6ATMA1 Comparison
Detailed side-by-side comparison of BSZ096N10LS5ATMA1 by Infineon and ISC080N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 β ActiveInfineon
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
ISC080N10NM6ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ096N10LS5ATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $1.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOSβ’ 6 100V |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS max) | 100 V | β |
| Gate-Source Voltage (VGS max) | 20 V (typical) | β |
| Continuous Drain Current (ID, TC=25 Β°C) | 40 A | β |
| Maximum Silicon Drain Current (ID max) | 62 A | β |
| Pulse Drain Current (ID,pulse) | 160 A | β |
| On-Resistance RDS(on) max | 9.6 mΞ© at VGS=10 V | β |
| Total Power Dissipation (Ptot, TC=25 Β°C) | 69 W | β |
| Gate Threshold Voltage VGS(th) | Logic-level (low single-volt range) | β |
| Diode Continuous Forward Current (IS) | 40 A (TC=25 Β°C) | β |
| Diode Forward Voltage (VSD) | 0.85 V typ, 1.2 V max at IF=20 A | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TDSON-8 FL (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C (junction) | -55Β°C to +175Β°C (TJ max, per datasheet) |
| Technology | OptiMOS 5 trench MOSFET | β |
| Gate Drive | Logic-level compatible | β |
| ESD Protection | Yes (gate-integrated) | β |
| RoHS Status | Compliant | Compliant |
| Packaging Code | ATMA1 (tape and reel) | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 100 V |
| Continuous Drain Current (ID) at Ta | β | 13 A |
| Continuous Drain Current (ID) at Tc | β | 75 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | β | 8.05 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 3.3 V at 36 Β΅A |
| MSL Level | β | 1 (per JEDEC J-STD-020, per datasheet) |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| Qualification | β | Industrial grade (per Infineon OptiMOS 6 100V family) |