BSZ0994NSATMA1 vs BSZ0901NSIATMA1 Comparison
Detailed side-by-side comparison of BSZ0994NSATMA1 by Infineon and BSZ0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ0994NSATMA1
BSZ0994NSATMA1 - 30V 13A N-Channel OptiMOS 5 MOSFET | Infineon
BSZ0994NSATMA1 β Active
Specification Comparison
| Parameter | BSZ0994NSATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.31 | $0.34 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 30V | OptiMOS 25V |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID, Ta) | 13 A | β |
| Power Dissipation (PD, Ta) | 2.1 W | β |
| Technology | Trench (OptiMOS 5) | OptiMOS trench N-channel MOSFET |
| Package | PG-TSDSON-8-25 (5x6 mm) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 | β |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +150 C (typical MOSFET range) |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: VGS(th) typ] | β |
| On-Resistance (RDS(on), typ @10V) | [DATA_NEEDED: RDS(on) typ @VGS=10V] | β |
| Gate Charge (Qg, typ) | [DATA_NEEDED: total gate charge Qg] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Packaging | Tape & Reel | Tape & Reel (ATMA1 suffix = 13-inch reel) |
| Part Number | β | BSZ0901NSIATMA1 |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | β | 25 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Power Dissipation (PD) at Ta=25C | β | 2.1 W |
| Power Dissipation (PD) at Tc=25C | β | 69 W |
| Pin Count | β | 8 |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge Qg] |