BSZ110N08NS5ATMA1 vs BSC016N06NSATMA1 Comparison
Detailed side-by-side comparison of BSZ110N08NS5ATMA1 by Infineon and BSC016N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ110N08NS5ATMA1
BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon
BSZ110N08NS5ATMA1 β Active
Specification Comparison
| Parameter | BSZ110N08NS5ATMA1 | BSC016N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.44 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | β |
| Technology | OptiMOS 5 N-Channel Power MOSFET | OptiMOSβ’ 5 |
| Drain-to-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at Tc | 40 A | β |
| On-Resistance RDS(on) max | 11 mΞ© | β |
| Power Dissipation (PD) at Tc | 50 W | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Polarity | N-Channel | β |
| Configuration | Single MOSFET | β |
| Gate Drive Voltage (VGS) | [DATA_NEEDED: VGS rating] | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55 Β°C to +150 Β°C |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (unlimited) |
| Product Series | β | OptiMOSβ’ 5 60V |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, Tc) | β | 100 A |
| Continuous Drain Current (ID, TA) | β | 30 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.6 mΞ© |
| Total Gate Charge (Qg) | β | 71 nC |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (TA) | β | 2.5 W |
| Power Dissipation (TC) | β | 139 W |
| Gate Drive (recommended) | β | 10 V |