BSZ110N08NS5ATMA1 vs BSC023N08NS5SCATMA1 Comparison
Detailed side-by-side comparison of BSZ110N08NS5ATMA1 by Infineon and BSC023N08NS5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ110N08NS5ATMA1
BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon
BSZ110N08NS5ATMA1 β ActiveInfineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΞ© OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 β ActiveSpecification Comparison
| Parameter | BSZ110N08NS5ATMA1 | BSC023N08NS5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.44 | $1.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | β |
| Technology | OptiMOS 5 N-Channel Power MOSFET | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at Tc | 40 A | β |
| On-Resistance RDS(on) max | 11 mΞ© | β |
| Power Dissipation (PD) at Tc | 50 W | β |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-WSON-8-2 (SuperSO8 DSC) |
| Mounting Type | Surface Mount | Surface Mount |
| Polarity | N-Channel | β |
| Configuration | Single MOSFET | β |
| Gate Drive Voltage (VGS) | [DATA_NEEDED: VGS rating] | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Part Number | β | BSC023N08NS5SCATMA1 |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 202 A |
| Power Dissipation (PD, Tc=25Β°C) | β | 188 W |
| On-State Resistance RDS(on) typ. | β | 2.3 mΞ© at VGS=10 V, ID=50 A |
| Gate Threshold Voltage VGS(th) typ. | β | 3.8 V |
| Total Gate Charge Qg | β | 98 nC at VGS=10 V |
| Input Capacitance Ciss | β | 6.8 nF |
| Output Capacitance Coss | β | 74 pF |
| Thermal Resistance RthJC | β | 0.72 K/W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |