BSZ110N08NS5ATMA1 vs BSC117N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSZ110N08NS5ATMA1 by Infineon and BSC117N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 βœ“ Active
Infineon
BSC117N08NS5ATMA1

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter BSZ110N08NS5ATMA1 BSC117N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.44 $0.46
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 β€”
Technology OptiMOS 5 N-Channel Power MOSFET OptiMOS 5
Drain-to-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID) at Tc 40 A β€”
On-Resistance RDS(on) max 11 mΞ© β€”
Power Dissipation (PD) at Tc 50 W β€”
Package PG-TSDSON-8-FL (PQFN 3.3 x 3.3) PG-TDSON-8-7 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Polarity N-Channel β€”
Configuration Single MOSFET β€”
Gate Drive Voltage (VGS) [DATA_NEEDED: VGS rating] β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] -55 C to +150 C (typical MOSFET junction)
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] 1
Part Number β€” BSC117N08NS5ATMA1
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) max β€” 80 V
Continuous Drain Current (ID) max β€” 49 A (Tc)
On-State Resistance (RDS(on)) max β€” 11.7 mOhm
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 50 W
Pin Count β€” 8
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]
Lead-Free β€” Yes

Datasheets & Resources

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