BSZ110N08NS5ATMA1 vs BSZ130N03LSGATMA1 Comparison

Detailed side-by-side comparison of BSZ110N08NS5ATMA1 by Infineon and BSZ130N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter BSZ110N08NS5ATMA1 BSZ130N03LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.44 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 OptiMOS 25V / 30V
Technology OptiMOS 5 N-Channel Power MOSFET β€”
Drain-to-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID) at Tc 40 A β€”
On-Resistance RDS(on) max 11 mΞ© β€”
Power Dissipation (PD) at Tc 50 W β€”
Package PG-TSDSON-8-FL (PQFN 3.3 x 3.3) PG-TSDSON-8 (8-PowerTDFN, 5x6 mm)
Mounting Type Surface Mount Surface Mount
Polarity N-Channel β€”
Configuration Single MOSFET β€”
Gate Drive Voltage (VGS) [DATA_NEEDED: VGS rating] β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] -55 C to +150 C (junction)
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Polarity / Channel Type β€” N-Channel Enhancement Mode
Drain-Source Voltage (Vds) β€” 30 V
Continuous Drain Current (Ta=25 C) β€” 10 A
Continuous Drain Current (Tc=25 C) β€” 35 A
On-State Resistance Rds(on) max @ Vgs=10V β€” 13 mOhm
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA β€” 2.2 V
Power Dissipation (Ta) β€” 2.1 W
Power Dissipation (Tc) β€” 25 W
Lead-Free β€” Yes
Halogen-Free β€” Yes
Qualification β€” Industrial / Commercial (non-automotive)

Datasheets & Resources

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