BSZ110N08NS5ATMA1 vs IAUCN04S7N009ATMA1 Comparison

Detailed side-by-side comparison of BSZ110N08NS5ATMA1 by Infineon and IAUCN04S7N009ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 βœ“ Active
Infineon
IAUCN04S7N009ATMA1

IAUCN04S7N009ATMA1 - 40V 0.96mΞ© 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 βœ“ Active

Specification Comparison

Parameter BSZ110N08NS5ATMA1 IAUCN04S7N009ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.44 $1.55
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 β€”
Technology OptiMOS 5 N-Channel Power MOSFET MOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID) at Tc 40 A β€”
On-Resistance RDS(on) max 11 mΞ© β€”
Power Dissipation (PD) at Tc 50 W β€”
Package PG-TSDSON-8-FL (PQFN 3.3 x 3.3) PG-TDSON-8-34 (Surface Mount)
Mounting Type Surface Mount Surface Mount
Polarity N-Channel β€”
Configuration Single MOSFET Single N-Channel
Gate Drive Voltage (VGS) [DATA_NEEDED: VGS rating] β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] β€”
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] 1
Series β€” OptiMOS 7
FET Type β€” N-Channel
Drain-to-Source Voltage (V_DSS) β€” 40 V
Continuous Drain Current (I_D) β€” 175 A
R_DS(on) Max @ V_GS = 10 V β€” 0.96 mΞ©
Gate Drive Voltage (V_GS) β€” 10 V
Operating Temperature β€” -55C to +175C
Qualification β€” AEC-Q101 (Automotive)
Supplier Device Package β€” PG-TDSON-8-34

Datasheets & Resources

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