BSZ110N08NS5ATMA1 vs IPD70N10S312ATMA2 Comparison

Detailed side-by-side comparison of BSZ110N08NS5ATMA1 by Infineon and IPD70N10S312ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter BSZ110N08NS5ATMA1 IPD70N10S312ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.44 $0.69
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 β€”
Technology OptiMOS 5 N-Channel Power MOSFET OptiMOS-T Power-MOSFET (N-Channel)
Drain-to-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID) at Tc 40 A β€”
On-Resistance RDS(on) max 11 mΞ© β€”
Power Dissipation (PD) at Tc 50 W β€”
Package PG-TSDSON-8-FL (PQFN 3.3 x 3.3) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
Polarity N-Channel β€”
Configuration Single MOSFET β€”
Gate Drive Voltage (VGS) [DATA_NEEDED: VGS rating] β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] -55C to +175C
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] 1 (unlimited floor life)
Part Number β€” IPD70N10S312ATMA2
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID, Tc) β€” 70 A
Power Dissipation (Ptot, Tc=25C) β€” 125 W
On-State Resistance RDS(on) β€” [DATA_NEEDED: typical RDS(on) at VGS=10V]
Gate-Source Voltage (VGS) β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Pin Count β€” 3 (Gate, Drain, Source)
Channel Type β€” N-Channel Enhancement Mode
Avalanche Rated β€” Yes

Datasheets & Resources

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