BSZ130N03LSGATMA1 vs IPD30N08S2L21ATMA1 Comparison
Detailed side-by-side comparison of BSZ130N03LSGATMA1 by Infineon and IPD30N08S2L21ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ130N03LSGATMA1 - 30V OptiMOS N-FET, 35A, PG-TSDSON-8 | Infineon
BSZ130N03LSGATMA1 β ActiveInfineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 β ActiveSpecification Comparison
| Parameter | BSZ130N03LSGATMA1 | IPD30N08S2L21ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 25V / 30V | β |
| Polarity / Channel Type | N-Channel Enhancement Mode | β |
| Drain-Source Voltage (Vds) | 30 V | β |
| Continuous Drain Current (Ta=25 C) | 10 A | β |
| Continuous Drain Current (Tc=25 C) | 35 A | β |
| On-State Resistance Rds(on) max @ Vgs=10V | 13 mOhm | β |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | 2.2 V | β |
| Power Dissipation (Ta) | 2.1 W | β |
| Power Dissipation (Tc) | 25 W | β |
| Package | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) | PG-TO252-3-11 (DPAK-2) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C (junction) | -55C to +175C |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Qualification | Industrial / Commercial (non-automotive) | β |
| Series | β | OptiMOS |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID) at Tc=25C | β | 30 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) at VGS=10 V | β | 26 milliohm (typ) |
| Gate Threshold Voltage (VGS(th)) | β | Logic-level (L series) |
| Gate Charge (Qg) typ | β | 56 nC |
| Power Dissipation (PD) at Tc=25C | β | 136 W |
| Maximum Junction Temperature | β | +175C |
| Pin Count | β | 3 (Drain tab + Gate + Source) |
| Automotive Qualification | β | AEC-Q101 qualified |