IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
MPN: IPD30N08S2L21ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.03 | $1.03 |
| 10 | $0.92 | $9.20 |
| 100 | $0.78 | $78.00 |
| 500 | $0.66 | $330.00 |
| 1,000 | $0.55 | $550.00 |
| 2,500 | $0.48 | $1,200.00 |
IPD30N08S2L21ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch in which the gate field modulates a conducting channel between source and drain. Power MOSFETs occupy the hierarchy: power MOSFET -> discrete semiconductor -> power transistor -> semiconductor device. OptiMOS is Infineon's proprietary trench MOSFET platform designed to minimize conduction losses (low RDS(on)) and switching losses (low Qg, low Qgd) simultaneously. Logic-level variants ("L" series) accept 4.5 V gate drive from microcontrollers and gate drivers, simplifying gate-drive circuitry.
Key specifications include a maximum drain-source voltage VDS of 75 V, continuous drain current ID of 30 A at case temperature Tc=25C, pulsed drain current limited by thermal and safe-operating constraints, and maximum on-state resistance RDS(on) on the order of 26 milliohms at VGS=10 V. The device supports a maximum junction temperature of 175C and is qualified to AEC-Q101 for automotive reliability. The DPAK-2 footprint provides a low thermal-resistance path from die to PCB copper drain tab, with RthJC below 1 C/W typical.
The OptiMOS trench architecture achieves lower figure-of-merit (FOM = RDS(on) x Qg) than planar predecessors, enabling higher efficiency in switched-mode power supplies, motor drives, and DC-DC converters. The logic-level gate drive allows direct PWM control from 5 V microcontrollers or low-voltage gate drivers without level-shifting, reducing BOM cost in 12 V and 24 V automotive subsystems. AEC-Q101 qualification ensures reliability under thermal cycling, humidity, and vibration stresses required for under-hood and chassis-mounted electronics.
Typical applications include 12 V and 24 V automotive load switching, electric power steering (EPS), transmission control units, body control modules, DC-DC converters, motor drives (HVAC blowers, water pumps, fuel pumps), and reverse-battery protection circuits. The device is also suitable for industrial switched-mode power supplies, solar micro-inverters, hot-swap controllers, and OR-ing FETs in redundant power architectures.
When designing with this MOSFET, ensure the gate driver can source and sink peak currents required by Qg (approximately 56 nC). At 30 A continuous current the SOA curve must be observed; for pulsed loads consult the safe-operating-area graph in the manufacturer datasheet. The tab (drain) thermal pad requires substantial PCB copper area, typically 1 square inch minimum on FR-4 with 2 oz copper, to keep junction temperature below 150C at full load.
This page synthesizes distributor pricing, automotive-grade same-family drop-in alternatives, and practical PCB thermal-design notes not found in the manufacturer datasheet alone, providing an engineer-ready reference for 75 V / 30 A N-channel MOSFET selection.
Drop-in alternatives for IPD30N08S2L21ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD30N08S2L21ATMA1 (same form factor and footprint) — differing in Package, MSL Level, Drain-Source Voltage (VDS), Operating Temperature Range, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD30N10S3L34ATMA1
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View Datasheet →IPB180P04P4L02ATMA2
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →BSC076N06NS3GATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.65 / Unit
View Datasheet →BSZ130N03LSGATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.41 / Unit
View Datasheet →FDD5680
✅ Drop-In📋 Reference alternative (not in catalog)
IPD30N08S2L21ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 75 V |
| Continuous Drain Current (ID) at Tc=25C | 30 A |
| On-State Resistance (RDS(on)) at VGS=10 V | 26 milliohm (typ) |
| Gate Threshold Voltage (VGS(th)) | Logic-level (L series) |
| Gate Charge (Qg) typ | 56 nC |
| Power Dissipation (PD) at Tc=25C | 136 W |
| Operating Temperature Range | -55C to +175C |
| Maximum Junction Temperature | +175C |
| Package | PG-TO252-3-11 (DPAK-2) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (Drain tab + Gate + Source) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
| MSL Level | 1 |
IPD30N08S2L21ATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input (logic-level) |
| Pin 2 | Source — Source terminal (also connected to front-side tab sense lead) |
| Pin 3 | Drain — Drain terminal (also connected to rear metal tab and PCB copper pad) |
Safe Operating Area (DC)
Typical Applications
IPD30N08S2L21ATMA1 is suitable for 6 applications: Automotive 12V/24V Load Switching, Electric Power Steering (EPS) and Transmission Control, Automotive DC-DC Converters, HVAC Blower and Water Pump Motor Drives, Reverse-Battery Protection and OR-ing FETs, Industrial Switched-Mode Power Supplies (SMPS).
Automotive 12V/24V Load Switching
The IPD30N08S2L21ATMA1's 75 V VDS rating and 30 A continuous drain current make it well-suited for switching resistive and inductive loads on 12 V and 24 V automotive buses, including headlamp relays, seat-heater elements, and solenoid valves. The logic-level gate threshold accepts direct 5 V PWM drive from body-control modules without a level-shifter, reducing BOM cost. AEC-Q101 qualification ensures the device survives under-hood thermal cycling, vibration, and humidity. At 30 A load the 26 milliohm RDS(on) limits conduction loss to about 23 W, which is manageable with a 1 square inch 2 oz copper drain pad and natural convection. Compared to mechanical relays, the MOSFET provides silent, arc-free switching at much higher cycle rates for PWM dimming and load-shedding schemes.
Recommended
Electric Power Steering (EPS) and Transmission Control
The IPD30N08S2L21ATMA1 handles the high-current switching required for EPS motor drivers and transmission solenoid valves, where peak currents up to 30 A occur in PWM-controlled inductive loads. The 175C maximum junction temperature allows operation near hot transmission housings without active cooling. The device's 26 milliohm RDS(on) and 56 nC typical gate charge strike a balance between conduction loss and switching loss at 20-50 kHz PWM frequencies typical of EPS controllers. AEC-Q101 qualification covers the rigorous automotive reliability profile. PCB layout uses a 1 square inch copper pad with thermal vias to a 2 oz inner copper plane to keep junction temperature below 130C at 20 A continuous.
Recommended
Automotive DC-DC Converters
The IPD30N08S2L21ATMA1 serves as the primary low-side switch in 12 V to 5 V/3.3 V buck converters powering infotainment, ADAS, and instrument-cluster processors. Its low figure-of-merit (FOM = RDS(on) x Qg approximately 1.5 nC-ohm) supports switching frequencies above 200 kHz, enabling small inductor and capacitor selection. The 75 V VDS rating provides derating margin for 12 V load-dump transients up to 35 V and 24 V jump-start events up to 50 V. The DPAK-2 package's low thermal resistance (RthJC under 1.1 C/W) keeps junction temperature rise below 30C per watt dissipated, allowing 8-10 W continuous dissipation on a 1 square inch PCB copper pad. Logic-level gate drive simplifies interface to 5 V PWM controllers.
Recommended
HVAC Blower and Water Pump Motor Drives
The IPD30N08S2L21ATMA1 handles PWM switching for HVAC blower motors and electric water pumps where continuous currents up to 20 A and peak currents up to 30 A occur during startup. Its low RDS(on) (26 milliohm) reduces conduction losses at high duty cycles, improving overall drive efficiency and reducing thermal stress on the PCB. The logic-level gate allows direct PWM control from automotive MCUs at 5 V logic levels, eliminating gate-driver complexity. AEC-Q101 qualification and 175C maximum junction temperature ensure reliable operation in under-hood environments where ambient temperatures can reach 125C. The DPAK-2 footprint fits standard PCB layouts for discrete H-bridge configurations.
Recommended
Reverse-Battery Protection and OR-ing FETs
The IPD30N08S2L21ATMA1 works as the reverse-battery protection FET or OR-ing FET in redundant 12 V and 24 V power architectures. Its 75 V VDS rating handles load-dump transients during reverse-polarity fault events, and its 30 A current capability supports main load current without paralleling multiple devices. The 26 milliohm RDS(on) limits forward-voltage drop to about 0.78 V at 30 A, which is acceptable in non-isolated battery-protection circuits. Logic-level gate drive allows simple PNP-transistor pull-up for self-biased reverse-polarity protection or comparator-controlled active OR-ing. AEC-Q101 and 175C junction temperature ensure reliability across automotive temperature ranges.
Recommended
Industrial Switched-Mode Power Supplies (SMPS)
The IPD30N08S2L21ATMA1 functions as the primary-side switch in low-to-medium power industrial SMPS, such as 24 V to 5 V/12 V auxiliary converters, factory-automation power modules, and PoE injector supplies. Its 75 V VDS rating supports universal-input designs operating from rectified 24 VAC or 48 VDC industrial bus rails. The OptiMOS trench technology achieves high efficiency (typically 92-95%) at 100-300 kHz switching frequencies, reducing heatsink requirements. The 136 W power dissipation rating and 175C maximum junction temperature enable compact designs without forced-air cooling. Surface-mount DPAK-2 packaging supports automated assembly, reducing manufacturing cost versus through-hole alternatives.
Recommended
Recommended Products Summary
Engineering reference data for IPD30N08S2L21ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD30N10S3L34ATMA1 | IPD30N10S3L34ATMA2 | IPB180P04P4L02ATMA2 | BSC076N06NS3GATMA1 | BSZ130N03LSGATMA1 | FDD5680 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK-2) | TO-252 (DPAK) |
| Channel Type | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 75 V | 100 V | 100 V | 40 V | 60 V | 30 V | 60 V |
| Continuous Drain Current (ID) | 30 A | 30 A | 30 A | 180 A | 76 A | 40 A | 32 A |
| Gate Threshold | Logic-level | Logic-level | Logic-level | Logic-level | Standard | Logic-level | Standard |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Key Differentiators
- Logic-level gate drive simplifies MCU interface (vs FDD5680)
- Higher VDS rating for automotive transient margin (vs BSZ130N03LSGATMA1)
- OptiMOS-2 trench technology for lower FOM (vs BSC076N06NS3GATMA1)
- AEC-Q101 automotive-qualified across all variants (vs IPB180P04P4L02ATMA2)
Design Notes
Estimated: at VIN=12V, VOUT=5V (buck), and 20 A continuous load, conduction loss is approximately 10.4 W (I^2 * RDS(on) = 20^2 * 0.026). With DPAK-2 thermal resistance from junction to case of approximately 1.1 C/W plus junction-to-ambient of 40-50 C/W on a 1 square inch 2 oz copper PCB pad, the steady-state junction temperature rise is approximately 460-570C above ambient - clearly infeasible. Practical operation requires either reducing current to 5-8 A continuous, increasing copper area to 4-6 square inches, adding thermal vias to inner copper planes, or applying forced airflow. Designers must consult the SOA curve and thermal derating curves in the Infineon datasheet rather than relying on the 136 W dissipation figure, which assumes 25C case temperature with infinite heatsink.
The DPAK-2 drain tab is the primary thermal path and must be soldered to a substantial copper pad on the top layer, connected through an array of thermal vias (typically 9-16 vias, 0.3 mm drill, 1 mm pitch) to a bottom-layer or inner-layer copper plane. Recommended minimum footprint per IPC-7351: 6.5 mm x 5.5 mm top-side pad. Solder paste stencil aperture should be 1:1 with the pad. Place gate-drive components within 10 mm of the gate pin to minimize parasitic inductance that causes gate ringing and potential MOSFET avalanche. Keep the source-sense path separate from the power-source path to avoid degrading switching performance.
Three common pitfalls when designing with the IPD30N08S2L21ATMA1: (1) Exceeding VDS=75V during inductive load switching - always add a TVS diode or freewheeling diode clamp across inductive loads to keep transient VDS below 80% of rating (60V). (2) Insufficient gate-drive voltage - logic-level parts need at least 4.5V VGS to fully enhance; driving with 3.3V logic from low-current GPIO can leave the MOSFET in linear region, causing excessive heat. (3) Ignoring the body diode reverse-recovery characteristic - in half-bridge topologies, body-diode recovery can cause shoot-through; add anti-parallel Schottky diode or use a part with integrated body-diode optimization for hard-switched bridges.
For switching applications above 100 kHz, separate the power loop (drain-source) from the gate-drive loop to minimize parasitic inductance. Use a kelvin source connection if available (the DPAK-2 pin 2 is the sense source lead). Place input bulk capacitors within 5 mm of the drain tab to minimize ringing. Use a ground plane on an inner layer directly beneath the MOSFET to provide low-impedance return path. Avoid routing analog signals or sensitive traces beneath the switching node, as high dv/dt (several V/ns) couples capacitively into nearby traces.
Compliance Information
AEC-Q101 qualified per Infineon product page. RoHS and REACH compliant. Halogen-free per manufacturer datasheet.
