BSZ150N10LS3GATMA1 vs BSZ110N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSZ150N10LS3GATMA1 by Infineon and BSZ110N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ150N10LS3GATMA1

BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 βœ“ Active
Infineon
BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter BSZ150N10LS3GATMA1 BSZ110N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.44
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ150N10LS3GATMA1 β€”
Technology / Family OptiMOS 3 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID, Tc=25 Β°C) 40 A β€”
On-Resistance RDS(on) max 15 mΞ© 11 mΞ©
Power Dissipation (TA=25 Β°C) 2.1 W β€”
Power Dissipation (TC=25 Β°C) 63 W β€”
Package PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range (TJ) -55 Β°C to +150 Β°C β€”
Gate Threshold VGS(th) typ [DATA_NEEDED: VGS(th) typical value] β€”
Total Gate Charge Qg [DATA_NEEDED: total gate charge Qg] β€”
RoHS Status Compliant Compliant
Lead-Free / Reflow Yes (lead-free, 260 Β°C peak reflow compatible) β€”
MSL Level [DATA_NEEDED: MSL moisture sensitivity level] [DATA_NEEDED: MSL level]
Part Family β€” OptiMOS 5
Technology β€” OptiMOS 5 N-Channel Power MOSFET
Drain-to-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID) at Tc β€” 40 A
Power Dissipation (PD) at Tc β€” 50 W
Polarity β€” N-Channel
Configuration β€” Single MOSFET
Gate Drive Voltage (VGS) β€” [DATA_NEEDED: VGS rating]
Operating Temperature Range β€” [DATA_NEEDED: operating temperature range]

Datasheets & Resources

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