BSZ900N20NS3GATMA1 vs IRL40S212ARMA1 Comparison
Detailed side-by-side comparison of BSZ900N20NS3GATMA1 by Infineon and IRL40S212ARMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ900N20NS3GATMA1
BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
BSZ900N20NS3GATMA1 β Active
Specification Comparison
| Parameter | BSZ900N20NS3GATMA1 | IRL40S212ARMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $2.31 |
| Part Number | BSZ900N20NS3GATMA1 | β |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | StrongIRFETβ’ (planar N-channel) |
| Drain-Source Voltage (VDS) | 200 V | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 15.2 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | 90 mΞ© | β |
| Typical RDS(on) @ VGS=10V | 77 mΞ© | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th) typ) | 3.5 V | β |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg] | β |
| Power Dissipation (PD, Tc=25C) | 62.5 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | β |
| Package | PG-TSDSON-8 (TDSON-8 FL) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | 1 (unlimited) |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| ESD Protection | Yes (integrated) | β |
| Avalanche Energy Rated | Yes (EAS) | β |
| Part Family | β | StrongIRFETβ’ |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | β | 195 A |
| On-Resistance (RDS(on)) | β | 1.9 mOhm max |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation (PD, Tc) | β | 231 W |
| Operating Temperature Range | β | [DATA_NEEDED: Tj max] |
| Lead-Free | β | Yes |