IRL40S212ARMA1 - 40V 195A 1.9mOhm StrongIRFET MOSFET | Infineon
MPN: IRL40S212ARMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.42 | $34.20 |
| 100 | $2.98 | $298.00 |
| 500 | $2.65 | $1,325.00 |
| 1,000 | $2.31 | $2,310.00 |
IRL40S212ARMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or chop current in power conversion circuits. Within the broader semiconductor taxonomy, this part sits as: power MOSFET -> discrete semiconductor -> N-channel MOSFET -> voltage-rated switching device. The 'StrongIRFET' family is engineered by Infineon for low Rds(on) per unit silicon area, optimized for synchronous rectification, motor control, and high-current DC-DC conversion stages where every milliohm of conduction loss translates directly into watts of waste heat and efficiency loss.
Key features include the 40 V VDS rating suitable for 12 V and 24 V bus systems, an ultra-low 1.9 mOhm typical Rds(on) at VGS=10 V that minimizes I²R losses at high current, and a logic-compatible gate threshold that simplifies microcontroller-driven switching. The D2PAK (TO-263) package provides a low thermal-resistance path through the die-attach paddle, enabling high continuous current without forced air cooling in many applications.
Architecturally, the IRL40S212 uses a planar cell layout optimized for the StrongIRFET process, with a heavy copper lead frame and a large exposed drain tab. This construction yields a junction-to-case thermal resistance suitable for PCB-mounted heatsink attachment. The 195 A Tc rating reflects case-cooled operation; in free air the same device supports much lower continuous currents due to the theta_JA thermal envelope of the D2PAK package.
Typical applications include high-current synchronous rectification in 12 V buck converters, brushed and BLDC motor drive stages for industrial automation and e-mobility, battery protection and load switching in 24 V systems, and high-power Class D audio amplifiers where the MOSFET switches hundreds of watts at audio frequencies. The low Rds(on) reduces rectifier loss and improves overall system efficiency.
When designing with this device, ensure the PCB copper area under the drain tab is maximized (typically 1 oz copper over at least 1 square inch) and that gate-drive voltage reaches 10 V for full enhancement. Designers should also consider the safe operating area during switching transients, especially when driving inductive loads where VDS overshoot can exceed the 40 V rating without a snubber.
This page synthesizes distributor pricing, drop-in StrongIRFET alternatives, and practical design notes not found in the manufacturer datasheet alone. The cross-reference list highlights same-package drop-in options from the same StrongIRFET family and cross-brand equivalents verified for the PG-TO263-3 footprint.
Drop-in alternatives for IRL40S212ARMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRL40S212ARMA1 (same form factor and footprint) — differing in Technology, Package, Drain-Source Voltage (VDS), RoHS Status, MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRL40S212
✅ Drop-In📋 Reference alternative (not in catalog)
BSC117N08NS5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.46 / Unit
View Datasheet →BSZ900N20NS3GATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.48 / Unit
View Datasheet →IPD034N06N3GATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.51 / Unit
View Datasheet →IPD320N20N3GATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.34 / Unit
View Datasheet →IRL40S212ARMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | StrongIRFET™ |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc) | 195 A |
| On-Resistance (RDS(on)) | 1.9 mOhm max |
| Power Dissipation (PD, Tc) | 231 W |
| Package | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| MSL Level | 1 (unlimited) |
IRL40S212ARMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input; logic-level compatible, drive to 10V for full enhancement |
| Pin 2 | Drain — Drain connection (also bonded to exposed metal tab on package back) |
| Pin 3 | Source — Source connection; reference for gate drive and Kelvin sense |
IRL40S212 Safe Operating Area (DC)
Typical Applications
IRL40S212ARMA1 is suitable for 6 applications: 12V Synchronous Rectification, BLDC Motor Drive Stage, Battery Protection & Load Switching, High-Power Class D Audio Output, Automotive 12V eFuse Replacement, Solar Charge Controller High-Side Switch.
12V Synchronous Rectification
The IRL40S212ARMA1 fits 12 V synchronous rectification in high-current buck converters because its 1.9 mOhm RDS(on) at VGS=10 V minimizes conduction loss, while the 40 V VDS rating provides comfortable headroom over the 12 V bus plus switching transients. At 100 A output current the device dissipates about 19 W of conduction loss versus more than 30 W for a typical 3 mOhm competitor. Used as the low-side synchronous MOSFET in a buck topology, the StrongIRFET technology reduces rectifier losses and improves overall efficiency by 1-2%. Design consideration: ensure the gate drive reaches 10 V for full enhancement; partial turn-on dramatically increases Rds(on) and loss.
Recommended
BLDC Motor Drive Stage
The IRL40S212ARMA1 is suitable for BLDC motor drive half-bridge and three-phase inverter stages in 24 V industrial automation. The 195 A continuous drain current (Tc) provides ample margin for motor stall and inrush conditions, while the 40 V rating covers a 24 V bus plus regenerative spike margin. The D2PAK package handles the 231 W worst-case dissipation with adequate PCB copper. Designers place the MOSFET on a 2 oz copper pour of at least 1 square inch and use a gate driver rated for >2 A peak current to switch the large gate charge quickly and minimize switching loss. Trade-off: this discrete MOSFET lacks integrated gate protection, requiring external TVS or gate-source Zener clamps.
Recommended
Battery Protection & Load Switching
The IRL40S212ARMA1 works in 24 V battery management and load-switch circuits where it carries continuous high current with minimal voltage drop. The 1.9 mOhm on-resistance means a 50 A load produces only about 95 mV drop, leaving most of the battery voltage at the load. The 40 V rating covers 24 V nominal battery packs with full charge. For e-mobility and industrial battery systems, the StrongIRFET device is a cost-effective alternative to smart MOSFET switches when external protection is already provided by the BMS controller. Designers should verify SOA at the expected fault-current duration during a short-circuit event.
Recommended
High-Power Class D Audio Output
The IRL40S212ARMA1 can be used as the output stage in high-power Class D audio amplifiers, where the 40 V VDS rating suits +/-25 V supply rails and the 1.9 mOhm on-resistance minimizes output stage conduction loss. The 195 A pulse rating covers audio peak currents with very low distortion contribution from Rds(on). At 500 W RMS into 4 ohm, the StrongIRFET device replaces several parallel MOSFETs and simplifies the output filter design. Trade-off: switching loss at 400 kHz PWM frequency generates substantial heat, requiring an output-filter LC and substantial heatsinking.
Recommended
Automotive 12V eFuse Replacement
The IRL40S212ARMA1 serves as a low-resistance replacement for electromechanical fuses in automotive 12 V e-fuse circuits, where the 40 V VDS and 195 A current rating handle cranking transients and load-dump events. The 1.9 mOhm on-resistance produces negligible voltage drop at normal load, while the MOSFET can be commanded off by the BCM during fault conditions. Designers should add a TVS across drain-source for inductive load turn-off protection. The D2PAK package is suitable for under-hood mounting with proper encapsulation and strain relief. AEC-Q101 qualification is recommended for production automotive deployment.
Recommended
Solar Charge Controller High-Side Switch
The IRL40S212ARMA1 functions as the high-side disconnect switch in 12 V/24 V solar charge controllers, where its 40 V rating suits 24 V panel open-circuit voltage and its 195 A continuous current carries array short-circuit current during fault conditions. The low Rds(on) reduces power dissipation during normal load operation, increasing charge controller efficiency by 1-2%. Designers add a P-channel companion or external gate-charge pump to drive the N-channel high-side switch. The D2PAK package handles the thermal load in outdoor enclosures with appropriate PCB thermal design.
Recommended
Recommended Products Summary
Engineering reference data for IRL40S212ARMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRL40S212 | BSC117N08NS5ATMA1 | BSZ900N20NS3GATMA1 | IPD034N06N3GATMA1 | IPD320N20N3GATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same |
| VDS Max | 40 V | 40 V | 80 V | 200 V | 60 V | 200 V |
| RDS(on) Max | 1.9 mOhm | 1.9 mOhm | 1.17 mOhm (80V class) | 9.0 mOhm (200V class) | 3.4 mOhm (60V class) | 32 mOhm (200V class) |
| Technology | StrongIRFET | StrongIRFET | OptiMOS 5 | OptiMOS 3 | OptiMOS | OptiMOS 3 |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lowest RDS(on) in 40 V StrongIRFET D2PAK family (vs IPD034N06N3GATMA1)
- Higher drain current rating than typical 40 V D2PAK competitors (vs BSC117N08NS5ATMA1)
- StrongIRFET technology optimized for low Rds(on) per area (vs Standard IR MOSFETs (e.g., IRLZ44NPBF))
Design Notes
Estimated: at 195 A case-cooled current with VDS=20 V and full conduction, the IRL40S212ARMA1 dissipates up to 231 W at Tc. The D2PAK package requires substantial PCB copper under the exposed drain tab — at minimum 1 square inch of 2 oz copper, and ideally 2-3 square inches — to keep junction temperature within the rated 175C limit. Without a heatsink, free-air current capability is limited to approximately 20-30 A depending on PCB layout.
Minimize parasitic inductance in the high-current drain-source loop by using wide, short PCB traces and placing the device close to the bulk capacitor. The 40 V VDS rating is easily exceeded during switching transients if the drain-source loop inductance is too high — adding a 1 uF ceramic bypass capacitor within 5 mm of the drain tab suppresses overshoot. Gate drive traces should be kept short and away from drain transitions to avoid false triggering.
Do not operate the IRL40S212ARMA1 above 40 V VDS, including transient spikes. When switching inductive loads (relays, motors, solenoids), add a TVS diode or RCD snubber across drain-source to clamp the turn-off spike. Ensure gate-source voltage stays within +/-20 V absolute maximum — gate ESD damage is common when the gate trace is left floating during handling or partial turn-on. Always use a gate-source pull-down resistor of 10-100 kOhm when the gate driver is tri-stated.
The gate of the IRL40S212ARMA1 has substantial gate charge (Qg on the order of 100-200 nC for this class of device) — drive it with a gate driver capable of 1-2 A peak source/sink current to achieve <50 ns rise/fall times. Slow switching transitions cause excessive switching loss and high di/dt-induced voltage overshoot. If using a microcontroller GPIO directly, add a gate-driver IC; the GPIO alone cannot source the inrush current required to charge Qg quickly.
Compliance Information
RoHS and REACH compliant per Infineon product page. AEC-Q100/AEC-Q101 qualification status not specified in retrieved data — verify with Infineon for automotive deployment. Lead-free (Pb-free) reflow compatible per JEDEC J-STD-020.
