EP1SGX40GF1020I5N vs EP1SGX40GF800I5N Comparison
Detailed side-by-side comparison of EP1SGX40GF1020I5N by Altera and EP1SGX40GF800I5N by Altera. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Altera
EP1SGX40GF1020I5N - Stratix GX FPGA 41,250 LEs FC-FBGA-1020 | Altera
EP1SGX40GF1020I5N ObsoleteAltera
EP1SGX40GF800I5N - Stratix GX 40K LEs FPGA | Intel / Altera | 800-pin FBGA
EP1SGX40GF800I5N β Last Time BuySpecification Comparison
| Parameter | EP1SGX40GF1020I5N | EP1SGX40GF800I5N |
|---|---|---|
| Brand | Altera | Altera |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Obsolete | Last_time_buy |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $140.00 | $1,390.00 |
| Family | Stratix GX | Stratix GX |
| Logic Elements | 41,250 | 41,250 LEs |
| Configurable Logic Blocks (CLBs) | 4,125 | β |
| Process Technology | 130 nm CMOS | β |
| Core Supply Voltage (VCCINT) | 1.425 V to 1.575 V (typ. 1.5 V) | β |
| High-Speed Transceiver Channels | 20 | β |
| Transceiver Data Rate | 500 Mbps to 3.1875 Gbps per channel | β |
| Aggregate Serial Bandwidth | Up to 127.5 Gbps full-duplex | β |
| Maximum Clock Frequency | 5000 MHz (transceiver; 6 MHz reported by some distributor aggregators) | β |
| Combinatorial Delay | 7.49 ns per CLB (reported) | β |
| Package | 1020-ball FineLine BGA (FC-FBGA), 33 x 33 mm, 1 mm pitch | 800-pin FBGA (FineLine BGA) |
| Operating Temperature | 0 C to +85 C (commercial; 'I' grade per some aggregators) | β |
| Mounting Type | Surface Mount | β |
| Temperature Grade (per aggregator) | Military (per Vyrian aggregator listing) | β |
| RoHS Status | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS status] |
| Equivalent LEs | β | 41,250 |
| Embedded Memory | β | 3.42 Mbit |
| Total RAM Bits | β | 3,423,744 bits |
| Multi-Gigabit Transceivers | β | 20 channels |
| Maximum User I/O | β | 376 |
| I/O Banks | β | 11 |
| Speed Grade | β | -5 (faster) |
| Operating Temperature (Junction) | β | -40C to +100C (industrial) |
| Process Node | β | 130 nm |
| Supply Voltage - Core (VCCINT) | β | 1.5 V |
| Configuration Mode | β | SRAM, JTAG, EPC16/EPCS |