EP2A25F672C9N vs EP2A25F672I8N Comparison
Detailed side-by-side comparison of EP2A25F672C9N by Intel and EP2A25F672I8N by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Intel
EP2A25F672I8N - APEX II FPGA 900K Gates 672-BGA | Intel / Altera
EP2A25F672I8N β Last Time BuySpecification Comparison
| Parameter | EP2A25F672C9N | EP2A25F672I8N |
|---|---|---|
| Brand | Intel | Intel |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Obsolete | Last_time_buy |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $195.00 | $198.50 |
| Family | APEX II | APEX II |
| Logic Elements / Cells | 24320 | β |
| System Gates | Approx. 900000 | β |
| Maximum User I/O | 492 | β |
| Operating Frequency | 236 MHz | β |
| Core Supply Voltage (VCCINT) | 1.425 V to 1.575 V (nominal 1.5 V) | β |
| Process Technology | 0.15 Β΅m all-layer copper, up to 8 metal layers | 0.15 Β΅m all-layer copper-metal |
| Package | 672-ball FineLine BGA (F672), 27 Γ 27 mm, 1.00 mm pitch | 672-ball FC-FBGA (FineLine BGA) |
| Mounting Type | Surface Mount (BGA) | β |
| Seated Height (max) | 2.100 mm | β |
| Propagation Delay | 2.23 ns | 1.69 ns |
| Logic Family | CMOS | CMOS |
| Operating Temperature | 0 Β°C to +85 Β°C (commercial, C9 grade) | 0 Β°C to 85 Β°C |
| I/O Standards Supported | LVTTL, LVCMOS, PCI, GTL+, SSTL-2/3, LVDS, LVPECL, PCML, HyperTransport | True-LVDS, LVPECL, PCML, HyperTransport |
| LVDS Data Rate | Up to 1 Gbps (True-LVDS) | β |
| Configuration Interface | Serial / Parallel PROM, JTAG, passive parallel (enhanced) | β |
| Embedded Memory | Enhanced System Blocks (ESBs) for dual-port RAM | β |
| Design Software | Quartus II (v5.1 or later) | β |
| RoHS Status | Compliant (per distributor listings) | unknown |
| Device | β | EP2A25 |
| Logic Elements | β | 24,320 |
| Gates | β | 900,000 |
| Embedded Memory (bits) | β | 622,592 |
| User I/Os | β | 492 |
| Package Size | β | 27 x 27 mm |
| Ball Pitch | β | 1 mm |
| Metal Layers | β | Up to 8 |
| Core Voltage (VCCINT) | β | 1.5 V |
| Internal Frequency (max) | β | 333 MHz |
| Configuration Method | β | SRAM-based (Altera Quartus II) |
| Lead-Free | β | unknown |