EP3C40F780C8 vs EP3C40F780C7N Comparison
Detailed side-by-side comparison of EP3C40F780C8 by Intel and EP3C40F780C7N by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | EP3C40F780C8 | EP3C40F780C7N |
|---|---|---|
| Brand | Intel | Intel |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $99.95 | $145.40 |
| Family | Cyclone III | Cyclone III |
| Series | EP3C40 | β |
| Logic Elements | 39,600 | 39,600 LE |
| Total Memory Bits | 1,161,216 bits (1134 Kbit) | β |
| Embedded Memory | M9K blocks, 486 Kbit total (per family datasheet) | β |
| Embedded 18x18 Multipliers | 126 | β |
| General Purpose PLLs | 4 | β |
| Global Clock Networks | 20 | 20 |
| Maximum User I/O Pins | 535 | β |
| Process Technology | 65 nm low-power CMOS | β |
| Package | 780-ball FBGA (FineLine BGA) | 780-ball FBGA (FineLine BGA) |
| Speed Grade | C8 (commercial, -40C to +85C operating range per 'C' designator family convention) | 7 (C7, commercial) |
| User I/O Banks | [DATA_NEEDED: user I/O bank count] | β |
| Supported Memory Interfaces | DDR, DDR2, QDRII SRAM (via dedicated PHY) | β |
| Configuration | Serial (AS) / Parallel (AP) / JTAG | β |
| RoHS Status | Compliant | β |
| Mounting Type | Surface Mount (BGA) | β |
| Total RAM Bits | β | 1,161,216 bits |
| Embedded Multipliers | β | 126 (18x18) |
| User I/Os | β | 535 |
| Process Node | β | 65 nm TSMC low-power |
| Operating Temperature | β | 0C to +85C (commercial) |
| Supply Voltage (Core) | β | 1.2 V |
| Configuration Method | β | JTAG, Active Serial, Passive Serial |
| PLLs | β | 4 |
| Lead-Free / RoHS | β | Yes (N suffix) |
| Moisture Sensitivity Level | β | MSL3 (per J-STD-020) |