EPF10K100EFC484-1N vs EPF10K100EFC484-3N Comparison
Detailed side-by-side comparison of EPF10K100EFC484-1N by Intel and EPF10K100EFC484-3N by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Intel
EPF10K100EFC484-1N - 100K FLEX 10KE FPGA, 338 I/O, 484-BGA | Intel
EPF10K100EFC484-1N ObsoleteSpecification Comparison
| Parameter | EPF10K100EFC484-1N | EPF10K100EFC484-3N |
|---|---|---|
| Brand | Intel | Intel |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Obsolete | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $158.00 | $142.00 |
| Manufacturer | Intel (formerly Altera) | β |
| Series | FLEX 10KE | β |
| Device Type | Field Programmable Gate Array (FPGA) | β |
| Logic Elements / Cells | 4,992 | 4992 |
| Equivalent Gates | 100,000 | β |
| Embedded Memory Bits | 49,152 bits | β |
| Number of LABs | 624 | β |
| Number of Logic Elements | 4,992 | β |
| User I/Os | 338 | 338 |
| Number of Pins | 356 (BGA-356 per one source) / 484 (BGA-484 per other sources) | β |
| Package | 484-BBGA (FineLine BGA) | 484-ball FineLine BGA (FC484 / FBGA-484) |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Logic Family | CMOS | β |
| Process Technology | 0.22 Β΅m CMOS SRAM | 0.22 Β΅m CMOS |
| Core Supply Voltage | 2.5 V | β |
| I/O Supply Voltage | 3.3 V (5 V-tolerant inputs via VCCIO) | β |
| Propagation Delay (worst case) | 0.6 ns | β |
| Operating Temperature | 0 Β°C to 70 Β°C (commercial) | β |
| Configuration | SRAM-based, in-system reprogrammable | β |
| JTAG / IEEE 1149.1 | Yes | β |
| RoHS Status | compliant (lead-free FBGA) | β |
| Lifecycle Status | Obsolete (NRND per Intel/Altera PCN history) | β |
| Family | β | FLEX 10KE |
| Total Gates | β | 100,000 |
| Embedded Memory (EAB) | β | 49,152 bits (12 EABs) |
| Logic Array Blocks (LABs) | β | 624 |
| Core Voltage (VCCINT) | β | 2.5 V |
| I/O Voltage (VCCIO) | β | MultiVolt (2.5 V / 3.3 V / 5.0 V tolerant per bank) |
| Internal Performance | β | 200 MHz |
| Speed Grade | β | -3 (fastest commercial bin) |
| Temperature Grade | β | Commercial (0 Β°C to +70 Β°C) |
| Configuration Method | β | SRAM (external EPROM/Flash/JTAG required at power-up) |
| Lead-Free / RoHS | β | Yes (N suffix = lead-free) |