FDS6575 vs IRF7416TRPBF Comparison

Detailed side-by-side comparison of FDS6575 by onsemi and IRF7416TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF7416TRPBF IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF βœ“ Active

Specification Comparison

Parameter FDS6575 IRF7416TRPBF
Brand onsemi Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.28 $0.32
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -20 V β€”
Continuous Drain Current (ID) -10 A β€”
On-Resistance (RDS(on)) 13 mOhm max at VGS = -4.5 V β€”
Gate Drive Voltage Range 2.5 V to 8 V β€”
Gate Threshold Voltage [DATA_NEEDED: gate threshold voltage range] β€”
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] 61 nC
Technology PowerTrench (rugged gate) HEXFET (IR MOSFET)
Package SOIC-8 (SO-8) 8-SO (SOIC-8)
Mounting Type Surface Mount Surface Mount
Power Dissipation [DATA_NEEDED: power dissipation at TA] β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] β€”
Configuration Single MOSFET β€”
Gate Source Voltage (VGS) Range [DATA_NEEDED: VGS max rating] β€”
RoHS Status Compliant Compliant
FET Type β€” P-Channel
Drain-to-Source Voltage (VDS) β€” -30 V
Continuous Drain Current (ID) at TA=25C β€” -10 A
Pulsed Drain Current (IDM) β€” -50 A
Static Drain-to-Source On-Resistance (RDS(on)) max β€” 20 mOhm at VGS = -10 V
Gate-to-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” -1 V to -3 V
Power Dissipation (PD) max at TA=25C β€” 2.5 W
Thermal Resistance, Junction-to-Ambient (RthJA) β€” 50 C/W
Operating Junction Temperature Range β€” -55 C to +150 C
Lead-Free β€” Yes
MSL Level β€” 1 (unlimited)

Datasheets & Resources

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